VS-15TQ060-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 AFEATURES Base • 150 °C TJ operation cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical 1 3 strength and moisture resistance Cathode Anode TO-220AC 2L • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance IF(AV) 15 A please see www.vishay.com/doc?99912 VR 60 V VF at IF 0.56 V DESCRIPTION IRM typ. 45 mA at 125 °C The VS-15TQ060... Schottky rectifier has been optimized for TJ max. 150 °C very low forward voltage drop, with moderate leakage. The EAS 6 mJ proprietary barrier technology allows for reliable operation Package 2L TO-220AC up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling Circuit configuration Single diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOLCHARACTERISTICS VALUESUNITS IF(AV) Rectangular waveform 15 A VRRM 60 V IFSM tp = 5 μs sine 1000 A VF 15 Apk, TJ = 125 °C 0.56 V TJ Range -55 to +150 °C VOLTAGE RATINGS PARAMETERSYMBOLVS-15TQ060-M3UNITS Maximum DC reverse voltage VR 60 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETERSYMBOLTEST CONDITIONSVALUESUNITS Maximum average forward current I See fig. 5 F(AV) 50 % duty cycle at TC = 104 °C, rectangular waveform 15 5 μs sine or 3 μs rect. pulse Following any rated 1000 A Maximum peak one cycle non-repetitive load condition and surge current IFSM with rated V See fig. 7 10 ms sine or 6 ms rect. pulse RRM 260 applied Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH 6 mJ Current decaying linearly to zero in 1 μs Repetitive avalanche current IAR 1.50 A Frequency limited by TJ maximum VA = 1.5 x VR typical Revision: 22-Dec-2021 1 Document Number: 96290 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000