VS-15TQ060-M3 www.vishay.com Vishay Semiconductors 1000 1000 T = 150 °C 100 J T = 125 °C J 100 10 T = 100 °C J T = 150 °C J 1 T = 125 °C J T = 75 °C J T = 25 °C 10 J 0.1 T = 50 °C J - Reverse Current (mA) I R 0.01 T = 25 °C J 1 - Instantaneous Forward Current (A) 0.001 I F 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 60 VFM - Forward Voltage Drop (V)VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 T = 25 °C J - Junction Capacitance (pF) T C 100 0 10 20 30 40 50 60 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.75 D = 0.50 PDM 0.1 D = 0.33 D = 0.25 t1 D = 0.20 t2 0.01 Notes: - Thermal Impedance (°C/W) Single pulse 1. Duty factor D = t /t 1 2 . (thermal resistance) 2. Peak T = P x Z + T thJC J DM thJC C Z . 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 22-Dec-2021 3 Document Number: 96290 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000