Datasheet IRFD110 (Vishay) - 5

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DescripciónPower MOSFET
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IRFD110. Fig. 10a - Switching Time Test Circuit. Fig. 9 - Maximum Drain Current vs. Ambient Temperature

IRFD110 Fig 10a - Switching Time Test Circuit Fig 9 - Maximum Drain Current vs Ambient Temperature

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IRFD110
www.vishay.com Vishay Siliconix RD VDS 1.0 VGS D.U.T. Rg +V 0.8 - DD 10 V 0.6 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ain Current (A) 0.4
Fig. 10a - Switching Time Test Circuit
, Dr I D 0.2 VDS 90 % 0.0 25 50 75 100 125 150 175 91127_09 TA, Ambient Temperature (°C) 10 % VGS t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Ambient Temperature Fig. 10b - Switching Time Waveforms
103 ) A 102 thJ 0 - 0.5 0.2 0.1 10 0.05 0.02 PDM 0.01 1 t mal Response (Z 1 Single Pulse t2 0.1 (Thermal Response) Ther Notes: 1. Duty Factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 102 103 91127_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
S21-0885-Rev. D, 30-Aug-2021
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