Datasheet IRFD110 (Vishay)
| Fabricante | Vishay |
| Descripción | Power MOSFET |
| Páginas / Página | 9 / 1 — IRFD110. Power MOSFET. FEATURES. HVMDIP. DESCRIPTION. PRODUCT SUMMARY. … |
| Formato / tamaño de archivo | PDF / 154 Kb |
| Idioma del documento | Inglés |
IRFD110. Power MOSFET. FEATURES. HVMDIP. DESCRIPTION. PRODUCT SUMMARY. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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IRFD110
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
HVMDIP
• Repetitive avalanche rated • For automatic insertion G • End stackable • 175 °C Operating Temperature S G • Fast switching and ease of paralleling D S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
DESCRIPTION PRODUCT SUMMARY
Third generation power MOSFETs from Vishay provide the VDS (V) 100 designer with the best combination of fast switching, RDS(on) (Ω) VGS = 10 V 0.54 ruggedized device design, low on-resistance and Qg (Max.) (nC) 8.3 cost-effectiveness. Qgs (nC) 2.3 The 4 pin DIP package is a low cost machine-insertable Qgd (nC) 3.8 case style which can be stacked in multiple combinations on Configuration Single standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP Lead (Pb)-free IRFD110PbF
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 TA = 25 °C 1.0 Continuous drain current VGS at 10 V ID TA = 100 °C 0.71 A Pulsed drain current a IDM 8.0 Linear derating factor 0.0083 W/°C Single pulse avalanche energy b EAS 140 mJ Repetitive avalanche current a IAR 1.0 A Repetitive avalanche energy a EAR 0.13 mJ Maximum power dissipation TA = 25 °C PD 1.3 W Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) For 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12) c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-0885-Rev. D, 30-Aug-2021
1
Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
HVMDIP
• Repetitive avalanche rated • For automatic insertion G • End stackable • 175 °C Operating Temperature S G • Fast switching and ease of paralleling D S • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
DESCRIPTION PRODUCT SUMMARY
Third generation power MOSFETs from Vishay provide the VDS (V) 100 designer with the best combination of fast switching, RDS(on) (Ω) VGS = 10 V 0.54 ruggedized device design, low on-resistance and Qg (Max.) (nC) 8.3 cost-effectiveness. Qgs (nC) 2.3 The 4 pin DIP package is a low cost machine-insertable Qgd (nC) 3.8 case style which can be stacked in multiple combinations on Configuration Single standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP Lead (Pb)-free IRFD110PbF
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 TA = 25 °C 1.0 Continuous drain current VGS at 10 V ID TA = 100 °C 0.71 A Pulsed drain current a IDM 8.0 Linear derating factor 0.0083 W/°C Single pulse avalanche energy b EAS 140 mJ Repetitive avalanche current a IAR 1.0 A Repetitive avalanche energy a EAR 0.13 mJ Maximum power dissipation TA = 25 °C PD 1.3 W Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) For 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12) c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-0885-Rev. D, 30-Aug-2021
1
Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000