Datasheet HUF75652G3 (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Power, N-Channel, Ultrafet 100 V, 75 A, 8 mW |
| Páginas / Página | 12 / 4 — HUF75652G3. TYPICAL PERFORMANCE CURVES. 1.2. 1.0. 0.8. VGS = 10V. 0.6. … |
| Formato / tamaño de archivo | PDF / 553 Kb |
| Idioma del documento | Inglés |
HUF75652G3. TYPICAL PERFORMANCE CURVES. 1.2. 1.0. 0.8. VGS = 10V. 0.6. 0.4. , DRAIN CURRENT (A) 20. 0.2. I D. POWER DISSIPATION MULTIPLIER. 100
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HUF75652G3 TYPICAL PERFORMANCE CURVES 1.2 80 1.0 60 0.8 VGS = 10V 0.6 40 0.4 , DRAIN CURRENT (A) 20 0.2 I D POWER DISSIPATION MULTIPLIER 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (
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C) TC, CASE TEMPERATURE (
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C) Figure 1. NORMALIZED POWER DISSIPATION vs Figure 2. MAXIMUM CONTINUOUS DRAIN CASE TEMPERATURE CURRENT vs CASE TEMPERATURE 2 DUTY CYCLE − DESCENDING ORDER 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 , NORMALIZED PDM Z qJC THERMAL IMPEDANCE NOTES: SINGLE PULSE t DUTY FACTOR: D = t 1 1/t2 t PEAK T 2 0.01 J = PDM
y
ZqJC
y
RqJC + TC 10−5 10−4 10−3 10−2 10−1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 2000 TC = 25
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C FOR TEMPERATURES 1000 ABOVE 25
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C DERATE PEAK VGS = 10V CURRENT AS FOLLOWS: VGS = 20V I = I 175 − T 25 C 150 , PEAK CURRENT (A) I DM TRANSCONDUCTANCE 100 MAY LIMIT CURRENT IN THIS REGION 50 10−4 10−3 10−2 10−1 100 101 10−5 t, PULSE WIDTH (s) Figure 4. PEAK CURRENT CAPABILITY www.onsemi.com 4
5
C) TC, CASE TEMPERATURE (
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C) Figure 1. NORMALIZED POWER DISSIPATION vs Figure 2. MAXIMUM CONTINUOUS DRAIN CASE TEMPERATURE CURRENT vs CASE TEMPERATURE 2 DUTY CYCLE − DESCENDING ORDER 1 0.5 0.2 0.1 0.05 0.02 0.01 0.1 , NORMALIZED PDM Z qJC THERMAL IMPEDANCE NOTES: SINGLE PULSE t DUTY FACTOR: D = t 1 1/t2 t PEAK T 2 0.01 J = PDM
y
ZqJC
y
RqJC + TC 10−5 10−4 10−3 10−2 10−1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 2000 TC = 25
5
C FOR TEMPERATURES 1000 ABOVE 25
5
C DERATE PEAK VGS = 10V CURRENT AS FOLLOWS: VGS = 20V I = I 175 − T 25 C 150 , PEAK CURRENT (A) I DM TRANSCONDUCTANCE 100 MAY LIMIT CURRENT IN THIS REGION 50 10−4 10−3 10−2 10−1 100 101 10−5 t, PULSE WIDTH (s) Figure 4. PEAK CURRENT CAPABILITY www.onsemi.com 4