Datasheet HUF75652G3 (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Power, N-Channel, Ultrafet 100 V, 75 A, 8 mW |
| Páginas / Página | 12 / 5 — HUF75652G3. TYPICAL PERFORMANCE CURVES. 1000. If R = 0 tAV = … |
| Formato / tamaño de archivo | PDF / 553 Kb |
| Idioma del documento | Inglés |
HUF75652G3. TYPICAL PERFORMANCE CURVES. 1000. If R = 0 tAV = (L)(IAS)/(1.3. RATED BVDSS − VDD). If R. tAV = (L/R)ln[(IAS. R)/(1.3
Línea de modelo para esta hoja de datos
Versión de texto del documento
HUF75652G3 TYPICAL PERFORMANCE CURVES
(continued)
1000 1000 If R = 0 tAV = (L)(IAS)/(1.3
y
RATED BVDSS − VDD) If R
0
0 tAV = (L/R)ln[(IAS
y
R)/(1.3
y
RATED BVDSS − VDD) +1] 100 100 ms 100 STARTING TJ = 25
5
C 1ms OPERATION IN THIS 10 , DRAIN CURRENT (A) AREA MAY BE STARTING T I D 10ms J = 150
5
C LIMITED BY rDS(ON) , AVALANCHE CURRENT (A) SINGLE PULSE I AS TJ = MAX RATED 1 TC = 25
5
C 10 1 10 100 0 50 0.01 0.1 1 0 1 VDS , DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 5. FORWARD BIAS SAFE OPERATING AREA Figure 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 200 200 PULSE DURATION = 80 V ms GS = 20V VGS = 7V DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6V VDD = 15V 150 150 VGS =5V 100 100 TJ = 175
5
C DRAIN CURRENT (A) TJ = 25
5
C , DRAIN CURRENT (A) I D, 50 50 I D PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX TC = 25
5
C T 0 J = −55
5
C 0 2 3 4 5 6 0 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. TRANSFER CHARACTERISTICS Figure 8. SATURATION CHARACTERISTICS 2.5 1.2 PULSE DURATION = 80 ms VGS = VDS, ID = 250 mA DUTY CYCLE = 0.5% MAX 2.0 1.0 1.5 0.8 ON RESISTANCE 1.0 NORMALIZED GATE THRESHOLD VOLTAGE 0.6 NORMALIZED DRAIN TO SOURCE VGS = 10V, ID = 75A 0.5 0.4 −80 −40 0 40 80 120 160 200 −80 −40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (
5
C) TJ, JUNCTION TEMPERATURE (
5
C) Figure 9. NORMALIZED DRAIN TO SOURCE ON Figure 10. NORMALIZED GATE THRESHOLD VOLTAGE RESISTANCE vs JUNCTION TEMPERATU vs JUNCTION TEMPERATURE www.onsemi.com 5
(continued)
1000 1000 If R = 0 tAV = (L)(IAS)/(1.3
y
RATED BVDSS − VDD) If R
0
0 tAV = (L/R)ln[(IAS
y
R)/(1.3
y
RATED BVDSS − VDD) +1] 100 100 ms 100 STARTING TJ = 25
5
C 1ms OPERATION IN THIS 10 , DRAIN CURRENT (A) AREA MAY BE STARTING T I D 10ms J = 150
5
C LIMITED BY rDS(ON) , AVALANCHE CURRENT (A) SINGLE PULSE I AS TJ = MAX RATED 1 TC = 25
5
C 10 1 10 100 0 50 0.01 0.1 1 0 1 VDS , DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 5. FORWARD BIAS SAFE OPERATING AREA Figure 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 200 200 PULSE DURATION = 80 V ms GS = 20V VGS = 7V DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6V VDD = 15V 150 150 VGS =5V 100 100 TJ = 175
5
C DRAIN CURRENT (A) TJ = 25
5
C , DRAIN CURRENT (A) I D, 50 50 I D PULSE DURATION = 80 ms DUTY CYCLE = 0.5% MAX TC = 25
5
C T 0 J = −55
5
C 0 2 3 4 5 6 0 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. TRANSFER CHARACTERISTICS Figure 8. SATURATION CHARACTERISTICS 2.5 1.2 PULSE DURATION = 80 ms VGS = VDS, ID = 250 mA DUTY CYCLE = 0.5% MAX 2.0 1.0 1.5 0.8 ON RESISTANCE 1.0 NORMALIZED GATE THRESHOLD VOLTAGE 0.6 NORMALIZED DRAIN TO SOURCE VGS = 10V, ID = 75A 0.5 0.4 −80 −40 0 40 80 120 160 200 −80 −40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (
5
C) TJ, JUNCTION TEMPERATURE (
5
C) Figure 9. NORMALIZED DRAIN TO SOURCE ON Figure 10. NORMALIZED GATE THRESHOLD VOLTAGE RESISTANCE vs JUNCTION TEMPERATU vs JUNCTION TEMPERATURE www.onsemi.com 5