Datasheet IRL3103PbF (International Rectifier) - 3
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 10 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 198 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRL3103PbF 1000 1000 VGS VGS TOP 15V TOP 15V 10V ) 10V 4.5V 4.5V 3.7V 3.7V 3.5V 3.5V 3.3V 3.3V 3.0V 3.0V BOTTOM 2.7V urrent (A BOTTOM 2.7V 100 100 ource C 2.7V 10 rain-to-S 10 2.7V I , D D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25 C ° T = 175 J °C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID = 56A ) T = 25 C J ° 2.0 urrent (A 100 T = 175 C J ° 1.5 ource C 1.0 (Normalized) 10 rain-to-S I , D D 0.5 (on) V = DS 15V S D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 1 0.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature ( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.5 ID = 56A ) T = 25 C J ° 2.0 urrent (A 100 T = 175 C J ° 1.5 ource C 1.0 (Normalized) 10 rain-to-S I , D D 0.5 (on) V = DS 15V S D 20µs PULSE WIDTH R , Drain-to-Source On Resistance V = GS 10V 1 0.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature ( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature www.irf.com 3