Datasheet IRL3103PbF (International Rectifier) - 2
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 10 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 198 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
Línea de modelo para esta hoja de datos
Versión de texto del documento
IRL3103PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 12 VGS = 10V, ID = 34A R mΩ DS(on) Static Drain-to-Source On-Resistance ––– ––– 16 VGS = 4.5V, ID = 28A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 34A ––– ––– 25 V I µA DS = 30V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA IGSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 33 ID = 34A Qgs Gate-to-Source Charge ––– ––– 5.9 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 15V tr Rise Time ––– 120 ––– ID = 34A td(off) Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω tf Fall Time ––– 9.1 ––– VGS = 4.5V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1650 ––– VGS = 0V Coss Output Capacitance ––– 650 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1320 130 mJ IAS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 64 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 220 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 34A Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents Starting T operation outside rated limits. J = 25°C, L = 220µH R This is a calculated value limited to T G = 25Ω, IAS = 34A, VGS=10V (See Figure 12) J = 175°C . ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 12 VGS = 10V, ID = 34A R mΩ DS(on) Static Drain-to-Source On-Resistance ––– ––– 16 VGS = 4.5V, ID = 28A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 22 ––– ––– S VDS = 25V, ID = 34A ––– ––– 25 V I µA DS = 30V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V nA IGSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 33 ID = 34A Qgs Gate-to-Source Charge ––– ––– 5.9 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 17 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 15V tr Rise Time ––– 120 ––– ID = 34A td(off) Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω tf Fall Time ––– 9.1 ––– VGS = 4.5V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1650 ––– VGS = 0V Coss Output Capacitance ––– 650 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1320 130 mJ IAS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 64 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 220 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 34A Qrr Reverse Recovery Charge ––– 110 170 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents Starting T operation outside rated limits. J = 25°C, L = 220µH R This is a calculated value limited to T G = 25Ω, IAS = 34A, VGS=10V (See Figure 12) J = 175°C . ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 2 www.irf.com