Datasheet BAV99 (Nexperia) - 3

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Nexperia BAV99 High-speed switching diode 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per diode
VR reverse voltage - 100 V VRRM repetitive peak reverse - 100 V voltage IF forward current single diode loaded - 215 mA double diode loaded - 125 mA IFRM repetitive peak forward - 500 mA current IFSM non-repetitive peak tp = 1 µs; square wave; Tj(init) = 25 °C - 4 A forward current tp = 1 ms; square wave; Tj(init) = 25 °C - 1 A tp = 1 s; square wave; Tj(init) = 25 °C - 0.5 A
Per device; one diode loaded
Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from single diode loaded; in free air [1] - - 500 K/W junction to ambient Rth(j-sp) thermal resistance from - - 360 K/W junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BAV99 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. Al rights reserved
Product data sheet 1 July 2022 3 / 10
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents