Datasheet MPS2369, MPS2369A (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Switching Transistors NPN Silicon |
| Páginas / Página | 5 / 2 — NPN Silicon. *ON Semiconductor Preferred Device. MAXIMUM RATINGS. Rating. … |
| Revisión | 2 |
| Formato / tamaño de archivo | PDF / 103 Kb |
| Idioma del documento | Inglés |
NPN Silicon. *ON Semiconductor Preferred Device. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. CASE 29–11, STYLE 1. TO–92 (TO–226AA)
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ON Semiconductor Switching Transistors MPS2369
NPN Silicon
MPS2369A*
*ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc 1 Collector Current — Continuous IC 200 mAdc 2 3 Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C
CASE 29–11, STYLE 1 TO–92 (TO–226AA)
Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
COLLECTOR Thermal Resistance, Junction to Ambient RJA 200 °C/W 3 2 BASE 1 EMITTER
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO 15 — — Vdc (IC = 10 mAdc, IB = 0) MPS2369A Collector–Emitter Breakdown Voltage V(BR)CES 40 — — Vdc (IC = 10 µAdc, VBE = 0) MPS2369,A Collector–Base Breakdown Voltage V(BR)CBO 40 — — Vdc (IC = 10 Adc, IE = 0) MPS2369,A Emitter–Base Breakdown Voltage V(BR)EBO 4.5 — — Vdc (IE = 10 Adc, IC = 0) MPS2369,A Collector Cutoff Current ICBO µAdc (VCB = 20 Vdc, IE = 0) — — 0.4 (VCB = 20 Vdc, IE = 0, TA = 125°C) MPS2369,A — — 30 Collector Cutoff Current ICES — — 0.4 µAdc (VCE = 20 Vdc, VBE = 0) MPS2369,A 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
June, 2001 – Rev. 2 MPS2369/D
NPN Silicon
MPS2369A*
*ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc 1 Collector Current — Continuous IC 200 mAdc 2 3 Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C
CASE 29–11, STYLE 1 TO–92 (TO–226AA)
Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
COLLECTOR Thermal Resistance, Junction to Ambient RJA 200 °C/W 3 2 BASE 1 EMITTER
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1) V(BR)CEO 15 — — Vdc (IC = 10 mAdc, IB = 0) MPS2369A Collector–Emitter Breakdown Voltage V(BR)CES 40 — — Vdc (IC = 10 µAdc, VBE = 0) MPS2369,A Collector–Base Breakdown Voltage V(BR)CBO 40 — — Vdc (IC = 10 Adc, IE = 0) MPS2369,A Emitter–Base Breakdown Voltage V(BR)EBO 4.5 — — Vdc (IE = 10 Adc, IC = 0) MPS2369,A Collector Cutoff Current ICBO µAdc (VCB = 20 Vdc, IE = 0) — — 0.4 (VCB = 20 Vdc, IE = 0, TA = 125°C) MPS2369,A — — 30 Collector Cutoff Current ICES — — 0.4 µAdc (VCE = 20 Vdc, VBE = 0) MPS2369,A 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
June, 2001 – Rev. 2 MPS2369/D