Datasheet MPSH81, MMBTH81 (ON Semiconductor) - 2

MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C TO-92 E SOT-23 B B Mark: 3D PNP RF Transistor
This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Characteristic Max Units MPSH81 *MMBTH81
PD Total Device Dissipation 350 225 mW Derate above 25°C 2.8 1.8 mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 MPSH81/D