Datasheet ADG798-KGD (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | High Temperature, Low Voltage, 8-Channel Multiplexer |
| Páginas / Página | 13 / 3 — Known Good Die. ADG798-KGD. SPECIFICATIONS. Table 1. −55°C. TA ≤ +175°C. … |
| Formato / tamaño de archivo | PDF / 822 Kb |
| Idioma del documento | Inglés |
Known Good Die. ADG798-KGD. SPECIFICATIONS. Table 1. −55°C. TA ≤ +175°C. −55°C ≤ TA ≤ +210°C. Parameter. Symbol. Test Conditions/Comments
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Known Good Die ADG798-KGD SPECIFICATIONS
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 1. −55°C ≤ TA ≤ +175°C −55°C ≤ TA ≤ +210°C Parameter Symbol Test Conditions/Comments Min Typ1 Max Min Typ1 Max Unit
ANALOG SWITCH Analog Signal Range 0 VDD 0 VDD V On Resistance RON VS = 0 V to VDD, IDS = 10 mA, 4.5 9 5 10 Ω see Figure 3 Matching Between Channels ΔRON VS = 0 V to VDD, IDS = 10 mA 0.6 1.2 1.25 1.5 Ω Flatness RFLAT (ON) VS = 0 V to VDD, IDS = 10 mA 1.5 0.75 2 Ω LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage IS (Off) VD = 4.5 V/1 V, VS = 1 V/4.5 V, −50 ±0.01 +50 −180 ±0.01 +180 nA see Figure 4 Drain Off Leakage ID (Off ) VD = 4.5 V/1 V, VS = 1 V/4.5 V, −650 ±0.01 +650 −2600 ±0.01 +2600 nA see Figure 5 Channel On Leakage ID, IS (On) VD = VS = 1 V or 4.5 V, −650 ±0.01 +650 −2600 ±0.01 +2600 nA see Figure 6 DIGITAL INPUTS Input Voltage High VINH 2.4 2.4 V Low VINL 0.8 0.8 V Input Current IINL or IINH VIN = VINL or VINH −800 +0.005 +800 −800 +0.005 +800 nA Digital Input Capacitance CIN 2 2 pF DYNAMIC CHARACTERISTICS Transition Time tTRANSITION RL = 150 Ω, CL = 15 pF, 12 21 12 23 ns see Figure 7, VS1 = 3 V/0 V, VS8 = 0 V/3 V Break-Before-Make Time Delay tOPEN RL = 150 Ω, CL = 15 pF, VS = 3 V, 1 8 1 8 ns see Figure 8 TA = maximum temperature 9 9 ns On Time tON (EN) RL = 150 Ω, CL = 15 pF, VS = 3 V, 11 17 11 20 ns see Figure 9 Off Time tOFF (EN) RL = 150 Ω, CL = 15 pF, VS = 3 V, 5.5 11 5.5 12 ns see Figure 9 Charge Injection QINJ VS = 2.5 V, RS = 0 Ω, CL = 1 nF, ±3 ±3 pC see Figure 10 Off Isolation RL = 50 Ω, CL = 5 pF, f = 10 MHz −60 −60 dB RL = 50 Ω, CL = 5 pF, f = 1 MHz, −80 −80 dB see Figure 11 Channel to Channel Crosstalk RL = 50 Ω, CL = 5 pF, f = 10 MHz −60 −60 dB RL = 50 Ω, CL = 5 pF, f = 1 MHz, −80 −80 dB see Figure 12 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF, 55 55 MHz see Figure 13 Source Capacitance, Off CS (Off ) f = 1 MHz 13 13 pF Drain Capacitance, Off CD (Off ) f = 1 MHz 85 85 pF Source/Drain Capacitance, On CD, CS (On) f = 1 MHz 96 96 pF POWER REQUIREMENTS Supply Current IDD VDD = 5.5 V, 5 35 40 70 μA digital inputs = 0 V or 5.5 V 1 TA = 25°C, except for the analog switch and power requirements values where TA = 175°C or 210°C. Rev. 0 | Page 3 of 13 Document Outline FEATURES APPLICATIONS METAL MASK DIE IMAGE GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D PEAK CURRENT PER CHANNEL, Sx OR D (PULSED AT 1 MS, 10% DUTY CYCLE MAXIMUM) ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TRUTH TABLE TEST CIRCUITS OUTLINE DIMENSIONS DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS ORDERING GUIDE
Known Good Die ADG798-KGD SPECIFICATIONS
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 1. −55°C ≤ TA ≤ +175°C −55°C ≤ TA ≤ +210°C Parameter Symbol Test Conditions/Comments Min Typ1 Max Min Typ1 Max Unit
ANALOG SWITCH Analog Signal Range 0 VDD 0 VDD V On Resistance RON VS = 0 V to VDD, IDS = 10 mA, 4.5 9 5 10 Ω see Figure 3 Matching Between Channels ΔRON VS = 0 V to VDD, IDS = 10 mA 0.6 1.2 1.25 1.5 Ω Flatness RFLAT (ON) VS = 0 V to VDD, IDS = 10 mA 1.5 0.75 2 Ω LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage IS (Off) VD = 4.5 V/1 V, VS = 1 V/4.5 V, −50 ±0.01 +50 −180 ±0.01 +180 nA see Figure 4 Drain Off Leakage ID (Off ) VD = 4.5 V/1 V, VS = 1 V/4.5 V, −650 ±0.01 +650 −2600 ±0.01 +2600 nA see Figure 5 Channel On Leakage ID, IS (On) VD = VS = 1 V or 4.5 V, −650 ±0.01 +650 −2600 ±0.01 +2600 nA see Figure 6 DIGITAL INPUTS Input Voltage High VINH 2.4 2.4 V Low VINL 0.8 0.8 V Input Current IINL or IINH VIN = VINL or VINH −800 +0.005 +800 −800 +0.005 +800 nA Digital Input Capacitance CIN 2 2 pF DYNAMIC CHARACTERISTICS Transition Time tTRANSITION RL = 150 Ω, CL = 15 pF, 12 21 12 23 ns see Figure 7, VS1 = 3 V/0 V, VS8 = 0 V/3 V Break-Before-Make Time Delay tOPEN RL = 150 Ω, CL = 15 pF, VS = 3 V, 1 8 1 8 ns see Figure 8 TA = maximum temperature 9 9 ns On Time tON (EN) RL = 150 Ω, CL = 15 pF, VS = 3 V, 11 17 11 20 ns see Figure 9 Off Time tOFF (EN) RL = 150 Ω, CL = 15 pF, VS = 3 V, 5.5 11 5.5 12 ns see Figure 9 Charge Injection QINJ VS = 2.5 V, RS = 0 Ω, CL = 1 nF, ±3 ±3 pC see Figure 10 Off Isolation RL = 50 Ω, CL = 5 pF, f = 10 MHz −60 −60 dB RL = 50 Ω, CL = 5 pF, f = 1 MHz, −80 −80 dB see Figure 11 Channel to Channel Crosstalk RL = 50 Ω, CL = 5 pF, f = 10 MHz −60 −60 dB RL = 50 Ω, CL = 5 pF, f = 1 MHz, −80 −80 dB see Figure 12 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF, 55 55 MHz see Figure 13 Source Capacitance, Off CS (Off ) f = 1 MHz 13 13 pF Drain Capacitance, Off CD (Off ) f = 1 MHz 85 85 pF Source/Drain Capacitance, On CD, CS (On) f = 1 MHz 96 96 pF POWER REQUIREMENTS Supply Current IDD VDD = 5.5 V, 5 35 40 70 μA digital inputs = 0 V or 5.5 V 1 TA = 25°C, except for the analog switch and power requirements values where TA = 175°C or 210°C. Rev. 0 | Page 3 of 13 Document Outline FEATURES APPLICATIONS METAL MASK DIE IMAGE GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY CONTINUOUS CURRENT PER CHANNEL, Sx OR D PEAK CURRENT PER CHANNEL, Sx OR D (PULSED AT 1 MS, 10% DUTY CYCLE MAXIMUM) ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TRUTH TABLE TEST CIRCUITS OUTLINE DIMENSIONS DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS ORDERING GUIDE