Datasheet BUZ 171 (STMicroelectronics) - 6

BUZ 171 Typ. output characteristics Typ. drain-source on-resistance
ID = ƒ(VDS) RDS (on) = ƒ(ID) parameter: t = 80 µs parameter: V p GS -18 0.9 P
a b c d e f g h i
tot = 40W
l
Ω A V [V] GS I a -4.0 R D -14
k
DS (on) 0.7 b -4.5 c -5.0 -12 0.6 d -5.5
j
e -6.0 -10 0.5 f -6.5 g -7.0 -8
i
h -7.5 0.4
h
i -8.0 -6 j -9.0
g
0.3 k -10.0
f j
l -20.0 -4 0.2
e d
V -2 0.1 GS [V] = GS
c
a b c d e f g h i j -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0
b
0
a
0.0 0 -2 -4 -6 -8 -10 -12 -14 -16 V -19 0 -2 -4 -6 -8 -10 -12 A -16 V I DS D
Typ. transfer characteristics
ID = f (VGS)
Typ. forward transconductance
gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, V ≥ ≥ DS 2 x ID x RDS(on)max VDS 2 x ID x RDS(on)max -15 4.0 A S I -12 3.2 g D fs -11 2.8 -10 -9 2.4 -8 2.0 -7 -6 1.6 -5 1.2 -4 -3 0.8 -2 0.4 -1 0 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 -10 -12 A -15 V I GS D Semiconductor Group 6 07/96