Datasheet BUZ 171 (STMicroelectronics)
| Fabricante | STMicroelectronics |
| Descripción | SIPMOS Power Transistor |
| Páginas / Página | 9 / 1 — BUZ 171. SIPMOS. Power Transistor. Pin 1. Pin 2. Pin 3. Type. VDS. … |
| Formato / tamaño de archivo | PDF / 195 Kb |
| Idioma del documento | Inglés |
BUZ 171. SIPMOS. Power Transistor. Pin 1. Pin 2. Pin 3. Type. VDS. RDS(on. Package. Ordering Code. Maximum Ratings. Parameter. Symbol. Values. Unit
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BUZ 171 SIPMOS
®
Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on
)
Package Ordering Code
BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current ID A TC = 30 °C -8 Pulsed drain current IDpuls TC = 25 °C -32 Avalanche energy, single pulse EAS mJ ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 mH, Tj = 25 °C 70 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 40 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R ≤ thJC 3.1 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96
®
Power Transistor
• P channel • Enhancement mode • Avalanche rated
Pin 1 Pin 2 Pin 3
G D S
Type VDS ID RDS(on
)
Package Ordering Code
BUZ 171 -50 V -8 A 0.3 Ω TO-220 AB C67078-S1450-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current ID A TC = 30 °C -8 Pulsed drain current IDpuls TC = 25 °C -32 Avalanche energy, single pulse EAS mJ ID = -8 A, VDD = -25 V, RGS = 25 Ω L = 1.1 mH, Tj = 25 °C 70 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 40 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R ≤ thJC 3.1 K/W Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96