Datasheet RB520S30 (Nexperia) - 6
Fabricante | Nexperia |
Descripción | 200 mA low VF MEGA Schottky barrier rectifier |
Páginas / Página | 12 / 6 — Nexperia. RB520S30. 200 mA low VF MEGA Schottky barrier rectifier. Fig. … |
Revisión | 07042021 |
Formato / tamaño de archivo | PDF / 246 Kb |
Idioma del documento | Inglés |
Nexperia. RB520S30. 200 mA low VF MEGA Schottky barrier rectifier. Fig. 5. Diode capacitance as a function of reverse
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Nexperia RB520S30 200 mA low VF MEGA Schottky barrier rectifier
006aab704 35 006aab705 0.20 Cd (pF) PF(AV) 30 (W) (4) 0.16 25 (3) 20 0.12 (2) 15 (1) 0.08 10 0.04 5 0 0.0 0 10 20 30 0.0 0.1 0.2 0.3 VR (V) IF(AV) (A) f = 1 MHz; Tamb = 25 °C Tj = 150 °C
Fig. 5. Diode capacitance as a function of reverse
(1) δ = 0.1
voltage; typical values
(2) δ = 0.2 (3) δ = 0.5 (4) δ = 1
Fig. 6. Average forward power dissipation as a function of average forward current; typical values
006aab706 0.01 006aab707 0.3 PR(AV) (1) (W) IF(AV) 0.008 (A) (2) (1) 0.2 0.006 (2) (3) (3) 0.004 (4) 0.1 (4) 0.002 0.0 0.0 0 10 20 30 0 25 50 75 100 125 150 175 VR (V) Tamb (°C) Tj = 125 °C FR4 PCB, standard footprint (1) δ = 1 Tj = 150 °C (2) δ = 0.9 (1) δ = 1; DC (3) δ = 0.8 (2) δ = 0.5; f = 20 kHz (4) δ = 0.5 (3) δ = 0.2; f = 20 kHz
Fig. 7. Average reverse power dissipation as a
(4) δ = 0.1; f = 20 kHz
function of reverse voltage; typical values Fig. 8. Average forward current as a function of ambient temperature; typical values
RB520S30 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 7 April 2021 6 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents