Datasheet RB520S30 (Nexperia) - 5

Nexperia RB520S30 200 mA low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02; - 190 220 mV pulsed; Tj = 25 °C IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; - 250 290 mV pulsed; Tj = 25 °C IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; - 320 360 mV pulsed; Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; - 440 500 mV pulsed; Tamb = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; - 520 600 mV pulsed; Tj = 25 °C IR reverse current VR = 10 V; Tj = 25 °C - - 1 µA Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - - 20 pF 006aab702 1 006aab703 10- 3 IR I (1) F (A) (A) 10- 4 (1) 10- 1 (2) (2) 10- 5 10- 2 (3) (4) (5) 10- 6 (3) (4) 10- 7 10- 3 10- 8 10- 4 10- 9 0.0 0.2 0.4 0.6 0.8 0 10 20 30 VF (V) VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = -40 °C (5) Tj = -40 °C
Fig. 4. Reverse current as a function of reverse Fig. 3. Forward current as a function of forward voltage; typical values voltage; typical values
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Product data sheet 7 April 2021 5 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents