Datasheet PMF170XP (Nexperia) - 8

Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET
017aaa306 - 4 017aaa307 1.6 I a D (1) (2) (A) 1.4 - 3 1.2 - 2 1.0 - 1 0.8 (2) (1) 0 0.6 0 - 1 - 2 - 3 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
(1) Tj = 25 °C
as a function of junction temperature; typical
(2) Tj = 150 °C
values Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values
017aaa134 - 1.6 017aaa308 103 VGS(th) (V) (1) C - 1.2 (pF) Ciss (2) - 0.8 102 (3) C - 0.4 oss Crss 0.0 10 - 60 0 60 120 180 -10-1 -1 -102 -10 Tj (°C) VDS (V) ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values
PMF170XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 29 October 2013 8 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information