Datasheet KSD2012 (Fairchild) - 2

KSD201 Typical Characteristics 2 4 1000
0mA VCE = 5V I = 9 B 0mA T I = 8 B N I
3
B = 70mA IB = 60mA N I
100
B = 50mA CURRE GAI R IB = 40mA O T
2
IB = 30mA C E L IB = 20mA URRENT L
10
CO ],
1
IB = 10mA , DC C Ic[A h FE IB = 0mA
0 1 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10
V IC[A], COLLECTOR CURRENT CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain 10 4
Ic = 10 IB V E CE = 5V AG T L
3
VO
1
N RRENT IO T A R CU R
2
O U T ECT SA L
0.1
L O t)[V],
1
a (s [A], C CE I C V
0.01 0 0.001 0.1 1 10 0.4 0.8 1.2 1.6
IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 40
ICmax(pulse) 1m 10ms
35
100m S N IC(max) S
30
IO 1S T A
25
IP DC S CURRENT R IS
1
O D
20
R E ECT L W
15
O COL ], P
10
X [W [A], C I C MA P
5
O CEV
0.1 0 1 10 100 25 50 75 100 125 150 175
VCE[V], COLLECTOR-EMITTER VOLTAGE o TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International Rev. A, February 2000