Datasheet KSD2012 (Fairchild)
| Fabricante | Fairchild |
| Descripción | Low Frequency Power Amplifier |
| Páginas / Página | 4 / 1 — KSD201. KSD2012. Low Frequency Power Amplifier. NPN Epitaxial Silicon … |
| Formato / tamaño de archivo | PDF / 54 Kb |
| Idioma del documento | Inglés |
KSD201. KSD2012. Low Frequency Power Amplifier. NPN Epitaxial Silicon Transistor. Absolute Maximum Ratings. Symbol. Parameter. Value
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KSD201 2 KSD2012 Low Frequency Power Amplifier
• Complement to KSB1366 1 TO-220F 1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA h FE1 DC Current Gain VCE = 5V, IC = 0.5A 100 320 hFE2 VCE = 5V, IC = 3A 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.4 1 V VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 0.5A 0.7 1 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz
hFE Classification
Classification Y G hFE1 100 ~ 200 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000
• Complement to KSB1366 1 TO-220F 1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 µA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 µA h FE1 DC Current Gain VCE = 5V, IC = 0.5A 100 320 hFE2 VCE = 5V, IC = 3A 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.4 1 V VBE(on) Base-Emitter ON Voltage VCE = 5V, IC = 0.5A 0.7 1 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz
hFE Classification
Classification Y G hFE1 100 ~ 200 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000