Datasheet IRF9130 (Intersil) - 2

IRF9130 Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
IRF9130 UNITS
Drain to Source Breakdown Voltage (Note 1) . VDS -100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . VDGR -100 V Continuous Drain Current . ID -12 A TC = 100oC . ID -7.5 A Pulsed Drain Current (Note 3) . IDM -48 A Gate to Source Voltage . VGS ±20 V Maximum Power Dissipation (Figure 1) . PD 75 W Linear Derating Factor . 0.6 W/oC Single Pulse Avalanche Energy Rating (Note 4). EAS 500 mJ Operating and Storage Temperature . .TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . TL 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure 10) -100 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 250 µA On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = -10V -12 - - A Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = -6.5A, VGS = -10V, (Figures 8, 9) - 0.25 0.30 Ω Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = -6.5A 2 3.7 - S (Figure 12) Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 50Ω - 30 60 ns RL = 5.7Ω (Figures 17, 18) Rise Time tr - 70 140 ns MOSFET Switching Times are Essentially Turn-Off Delay Time td(OFF) Independent of Operating Temperature - 70 140 ns Fall Time tf - 70 140 ns Total Gate Charge Qg(TOT) VGS = -10V, ID = -15A, VDS = 0.8 x Rated BVDSS - 25 45 nC (Gate to Source + Gate to Drain) Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Gate to Source Charge Qgs - 13 - nC Operating Temperature Gate to Drain “Miller” Charge Qgd - 12 - nC Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 500 - pF (Figure 11) Output Capacitance COSS - 300 - pF Reverse Transfer Capacitance CRSS - 100 - pF Internal Drain Inductance LD Measured Between the Modified MOSFET - 5.0 - nH Contact Screw on the Symbol Showing the Flange that is Closer to Internal Devices Source and Gate Pins and Inductances the Center of Die
D
Internal Source Inductance LS Measured From the - 12.5 - nH
LD
Source Lead, 6mm (0.25in) From the Flange
G
and the Source
LS
Bonding Pad
S
Thermal Resistance Junction to Case RθJC - - 1.67 oC/W Thermal Resistance Junction to Ambient RθJA Typical Socket Mount - - 30 oC/W 5-9