Datasheet IRF9130 (Intersil) - 4
| Fabricante | Intersil |
| Descripción | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
| Páginas / Página | 7 / 4 — IRF9130. Typical Performance Curves. (Continued). 100. -20. VGS = -9V. … |
| Formato / tamaño de archivo | PDF / 67 Kb |
| Idioma del documento | Inglés |
IRF9130. Typical Performance Curves. (Continued). 100. -20. VGS = -9V. VGS = -10V. PULSE DURATION = 80. -16. VGS = -8V. -12. 1ms. VGS = -7V
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IRF9130 Typical Performance Curves
Unless Otherwise Specified
(Continued) 100 -20 VGS = -9V VGS = -10V PULSE DURATION = 80
µ
s 10
µ
s -16 100
µ
s VGS = -8V 10 -12 1ms VGS = -7V OPERATION IN THIS AREA 10ms IS LIMITED BY r -8 DS(ON) VGS = -6V , DRAIN CURRENT (A) 100ms 1 I D DC , DRAIN CURRENT (A) I D -4 VGS = -5V TC = 25oC TJ = MAX RATED VGS = -4V SINGLE PULSE 0.1 0 1 10 100 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS -10 -20 PULSE DURATION = 80
µ
s PULSE DURATION = 80
µ
s VGS = -7V V V DS
≥
I D(ON) x rDS(ON)MAX GS = -8V -8 -16 VGS = -9V T V J = 125oC GS = -6V VGS = -10V TJ = 25oC -6 -12 TJ = -55oC -4 TE DRAIN CURRENT (A) -8 A VGS = -5V , DRAIN CURRENT (A) I D -2 -4 , ON-ST VGS = -4V I D(ON) 0 0 0 -1 -2 -3 -4 -5 0 -2 -4 -6 -8 -10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 1.0 2.2 PULSE DURATION = 2
µ
s V V GS = -10V, ID = -4A GS = -10V 0.8 1.8 )
Ω
SOURCE SOURCE O 0.6 O 1.4 ANCE ANCE ( 0.4 1.0 , DRAIN T VGS = - 20V ON RESIST ON RESIST 0.6 r DS(ON) 0.2 NORMALIZED DRAIN T 0 0.2 0 -10 -20 -30 -40 -50 -40 0 40 80 120 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE
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Unless Otherwise Specified
(Continued) 100 -20 VGS = -9V VGS = -10V PULSE DURATION = 80
µ
s 10
µ
s -16 100
µ
s VGS = -8V 10 -12 1ms VGS = -7V OPERATION IN THIS AREA 10ms IS LIMITED BY r -8 DS(ON) VGS = -6V , DRAIN CURRENT (A) 100ms 1 I D DC , DRAIN CURRENT (A) I D -4 VGS = -5V TC = 25oC TJ = MAX RATED VGS = -4V SINGLE PULSE 0.1 0 1 10 100 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS -10 -20 PULSE DURATION = 80
µ
s PULSE DURATION = 80
µ
s VGS = -7V V V DS
≥
I D(ON) x rDS(ON)MAX GS = -8V -8 -16 VGS = -9V T V J = 125oC GS = -6V VGS = -10V TJ = 25oC -6 -12 TJ = -55oC -4 TE DRAIN CURRENT (A) -8 A VGS = -5V , DRAIN CURRENT (A) I D -2 -4 , ON-ST VGS = -4V I D(ON) 0 0 0 -1 -2 -3 -4 -5 0 -2 -4 -6 -8 -10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 1.0 2.2 PULSE DURATION = 2
µ
s V V GS = -10V, ID = -4A GS = -10V 0.8 1.8 )
Ω
SOURCE SOURCE O 0.6 O 1.4 ANCE ANCE ( 0.4 1.0 , DRAIN T VGS = - 20V ON RESIST ON RESIST 0.6 r DS(ON) 0.2 NORMALIZED DRAIN T 0 0.2 0 -10 -20 -30 -40 -50 -40 0 40 80 120 ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE
5-11