Datasheet BUK455-60A, BUK455-60B (Philips) - 5

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B VGS / V BUK455-50 WDSS% 12 120 110 VDS / V =10 10 100 90 40 8 80 70 6 60 50 4 40 30 2 20 10 0 0 0 10 20 30 40 20 40 60 80 100 120 140 160 180 QG / nC Tmb / C Fig.13. Typical turn-on gate-charge characteristics. Fig.15. Normalised avalanche energy rating. V = f(Q ); conditions: I = 41 A; parameter V W % = f(T ); conditions: I = 41 A GS G D DS DSS mb D IF / A BUK455-50A 100 VDD + L VDS - 50 VGS -ID/100 T.U.T. 0 Tj / C = 150 25 R 01 RGS shunt 0 0 1 2 VSDS / V Fig.16. Avalanche energy test circuit. Fig.14. Typical reverse diode current. = 2 ⋅ /( − ) I = f(V ); conditions: V = 0 V; parameter T W 0.5 ⋅ LI BV BV V DSS D DSS DSS DD F SDS GS j April 1993 5 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS