STL200N45LF7 N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data FeaturesOrder codeVDSRDS(on) max.ID STL200N45LF7 45 V 1.8 mΩ 120 A Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagramDescription This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summaryOrder codeMarkingPackagePacking STL200N45LF7 200N45F7 PowerFLAT™ 5x6 Tape and reel June 2016 DocID027980 Rev 4 1/14 This is information on a product in full production. www.st.com