Datasheet UF3C120150B7S (UnitedSiC) - 10

300 80 Etot Eon 250 J) Eoff ( m 60 ygr 200 en ) E C g n n 150 ( 40 hi V r GS = -5V/12V, itc R Qr 100 G_ON = 8.5W, RG_OFF = 20W, Sw FWD: same device with VGS = -5V, VDS = 800V, IS =13A, R 20 G = 20W di/dt = 1700A/ms, 50 VGS = -5V, RG =20W 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Junction Temperature, T Junction Temperature, T J (°C) J (°C) Figure 21. Clamped inductive switching energy vs. Figure 22. Reverse recovery charge Qrr vs. junction junction temperature at VDS = 800V and ID = 13A temperature Applications Information SiC FETs are enhancement-mode power switches formed by a high- Information on all products and contained herein is intended for voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET description only. No license, express or implied, to any intellectual connected in series. The silicon MOSFET serves as the control unit property rights is granted within this document. while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with UnitedSiC assumes no liability whatsoever relating to the choice, standard gate drivers and offers superior performance in terms of low selection or use of the UnitedSiC products and services described on-resistance (RDS(on)), output capacitance (Coss), gate charge (QG), and herein. reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC FETs also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the FET is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on SiC FET operation, see www.unitedsic.com. Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. Datasheet: UF3C120150B7S Rev. A, January 2021 10