Datasheet UF3C120150B7S (UnitedSiC) - 3

Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 1200 V VDS=1200V, 2 50 V Total drain leakage current I GS=0V, TJ=25°C DSS mA VDS=1200V, 17 VGS=0V, TJ=175°C V Total gate leakage current I DS=0V, TJ=25°C, GSS 4 20 mA VGS=-20V / +20V VGS=12V, ID=5A, 150 180 TJ=25°C V Drain-source on-resistance R GS=12V, ID=5A, DS(on) 250 mW TJ=125°C VGS=12V, ID=5A, 330 TJ=175°C Gate threshold voltage VG(th) VDS=5V, ID=10mA 3.5 4.4 5.5 V Gate resistance RG f=1MHz, open drain 4.6 W Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max Diode continuous forward current 1 IS TC=25°C 17 A Diode pulse current 2 IS,pulse TC=25°C 38 A VGS=0V, IF=5A, 1.46 2 T Forward voltage V J=25°C FSD V VGS=0V, IF=5A, 2 TJ=175°C V Reverse recovery charge Q R=800V, IF=13A, rr 67 nC VGS=-5V, RG_EXT=22W di/dt=1700A/ms, Reverse recovery time trr T 24 ns J=25°C V Reverse recovery charge Q R=800V, IF=13A, rr 64 nC VGS=-5V, RG_EXT=22W di/dt=1700A/ms, Reverse recovery time trr T 24 ns J=150°C Datasheet: UF3C120150B7S Rev. A, January 2021 3