Datasheet PSMNR55-40SSH (Nexperia) - 9
| Fabricante | Nexperia |
| Descripción | N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology |
| Páginas / Página | 14 / 9 — Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, … |
| Revisión | 06042021 |
| Formato / tamaño de archivo | PDF / 335 Kb |
| Idioma del documento | Inglés |
Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using
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Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
aaa-026897 2.4 aaa-032620 10 a VGS (V ( ) V 2 8 1.6 6 1.2 32 3 2 V 4 0.8 VDS = 1 4 1 4 V 2 0.4 0 0 -60 -30 0 30 60 90 120 150 180 0 40 80 120 160 200 Tj (°C) QG (nC) Tj = 25 °C; ID = 25 A
Fig. 15. Gate-source voltage as a function of gate Fig. 14. Normalized drain-source on-state resistance charge; typical values factor as a function of junction temperature
aaa-032621 105 V C DS (p ( F p ) ID Ciss 104 VGS(pl) Coss o VGS(th) 103 V C GS rss QGS2 QGS1 102 QGS QGD 10-1 1 10 102 Q V G(tot) DS (V) 003aaa508 VGS = 0 V; f = 1 MHz
Fig. 16. Gate charge waveform definitions Fig. 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 9 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-026897 2.4 aaa-032620 10 a VGS (V ( ) V 2 8 1.6 6 1.2 32 3 2 V 4 0.8 VDS = 1 4 1 4 V 2 0.4 0 0 -60 -30 0 30 60 90 120 150 180 0 40 80 120 160 200 Tj (°C) QG (nC) Tj = 25 °C; ID = 25 A
Fig. 15. Gate-source voltage as a function of gate Fig. 14. Normalized drain-source on-state resistance charge; typical values factor as a function of junction temperature
aaa-032621 105 V C DS (p ( F p ) ID Ciss 104 VGS(pl) Coss o VGS(th) 103 V C GS rss QGS2 QGS1 102 QGS QGD 10-1 1 10 102 Q V G(tot) DS (V) 003aaa508 VGS = 0 V; f = 1 MHz
Fig. 16. Gate charge waveform definitions Fig. 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 9 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents