Datasheet PSMNR55-40SSH (Nexperia) - 2

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Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 5 - 0.35 0.4 K/W junction to mounting base
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.33 0.47 0.55 mΩ resistance Fig. 13
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 190 267 nC Q Fig. 15; Fig. 16 GD gate-drain charge - 32 65 nC
Source-drain diode
Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2] - 93 - nC VDS = 20 V; Tj = 25 °C [1] 500A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal design and operating temperature. [2] includes capacitive recovery
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 G gate D 2 S source 3 S source G 4 S source mbb076 S mb D mounting base; connected to drain 1 2 3 4
LFPAK88 (SOT1235) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version
PSMNR55-40SSH LFPAK88 plastic, single-ended surface-mounted package SOT1235 (LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body
7. Marking Table 4. Marking codes Type number Marking code
PSMNR55-40SSH XH55S40S PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 2 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents