Datasheet PSMNR55-40SSH (Nexperia) - 4

FabricanteNexperia
DescripciónN-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
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Revisión06042021
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Nexperia. PSMNR55-40SSH. N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using

Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using

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Nexperia PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology
03aa16 120 aaa-032611 600 ID (A ( ) A Pder (%) 500 (1) 1 80 400 300 40 200 100 0 0 0 50 100 150 200 0 25 50 75 100 125 150 175 200 Tmb (°C) Tmb (°C) VGS ≥ 10 V (1) 500A continuous current has been successfully demonstrated during application tests. Practically
Fig. 1. Normalized total power dissipation as a
the current will be limited by PCB, thermal design
function of mounting base temperature
and operating temperature.
Fig. 2. Continuous drain current as a function of mounting base temperature
aaa-032613 104 ID (A ( ) A Li L mit R DSon o n = V DS / I D I 103 tpt p= = 10 1 0 µ s µ 10 1 0 0 0 µ s 102 DC 10 1 1 m s m 10 1 0 m s m 10 1 0 0 0 m s m 110-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMNR55-40SSH All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 6 April 2021 4 / 14
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents