Datasheet SUB15P01-52 (Vishay) - 4
| Fabricante | Vishay |
| Descripción | P-Channel 8-V (D-S) 175C MOSFET |
| Páginas / Página | 5 / 4 — SUP/SUB15P01-52. Vishay Siliconix. On-Resistance vs. Junction … |
| Formato / tamaño de archivo | PDF / 52 Kb |
| Idioma del documento | Inglés |
SUP/SUB15P01-52. Vishay Siliconix. On-Resistance vs. Junction Temperature. Source-Drain Diode Forward Voltage
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SUP/SUB15P01-52 Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1.6 30 VGS = 4.5 V ID = 10 A ) 1.4 T W J = 150_C 10 1.2 TJ = 25_C 1.0 (Normalized) On-Resistance ( – Source Current (A) – SI 0.8 r DS(on) 1 0.6 –50 –25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area
18 100.0 15 100 ms 12 10.0 Limited by rDS(on) 1 ms 10 ms 9 100 ms dc, 1 s Drain Current (A) Drain Current (A) – 6 – 1.0 ID ID TC = 25_C 3 Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1.0 10.0 TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Duty Cycle = 0.5 0.2 ransient T 0.1 fective 0.1 0.05 Thermal Impedance 0.02 Single Pulse Normalized Ef 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71085
4
S-20966—Rev. C, 01-Jul-02 Document Outline Datasheet Disclaimer Datasheet Disclaimer
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
1.6 30 VGS = 4.5 V ID = 10 A ) 1.4 T W J = 150_C 10 1.2 TJ = 25_C 1.0 (Normalized) On-Resistance ( – Source Current (A) – SI 0.8 r DS(on) 1 0.6 –50 –25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 TJ – Junction Temperature (_C) VSD – Source-to-Drain Voltage (V) THERMAL RATINGS
Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area
18 100.0 15 100 ms 12 10.0 Limited by rDS(on) 1 ms 10 ms 9 100 ms dc, 1 s Drain Current (A) Drain Current (A) – 6 – 1.0 ID ID TC = 25_C 3 Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1.0 10.0 TC – Case Temperature (_C) VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Duty Cycle = 0.5 0.2 ransient T 0.1 fective 0.1 0.05 Thermal Impedance 0.02 Single Pulse Normalized Ef 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71085
4
S-20966—Rev. C, 01-Jul-02 Document Outline Datasheet Disclaimer Datasheet Disclaimer