Datasheet SUB15P01-52 (Vishay)
| Fabricante | Vishay |
| Descripción | P-Channel 8-V (D-S) 175C MOSFET |
| Páginas / Página | 5 / 1 — SUP/SUB15P01-52. Vishay Siliconix. P-Channel 8-V (D-S), 175. C MOSFET. … |
| Formato / tamaño de archivo | PDF / 52 Kb |
| Idioma del documento | Inglés |
SUP/SUB15P01-52. Vishay Siliconix. P-Channel 8-V (D-S), 175. C MOSFET. VDS (V). rDS(on) (. ID (A). TO-220AB. TO-263. Parameter. Symbol. Limit
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SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V (D-S), 175
_
C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (
W
) ID (A)
0.052 @ VGS = –4.5 V –15 –8 0.070 @ VGS = –2.5 V –10 0.105 @ VGS = –1.8 V –10.5 S
TO-220AB TO-263
G DRAIN connected to TAB G D S Top View G D S D SUB15P01-52 Top View P-Channel MOSFET SUP15P01-52 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –8 V Gate-Source Voltage VGS "8 T Continuous Drain Current C = 25_C –15 Continuous Drain Current I (T D J = 175_C) TC = 125_C –8.7 A Pulsed Drain Current IDM –25 Avalanche Current IAR –10 Repetitive Avalanche Energyb L = 0.1 mH EAR 5 mJ TC = 25_C (TO-220AB and TO-263) 25d Power Dissipation PD W TA = 25_C (TO-263)c 2.1 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambient PCB Mount (TO-263)c RthJA 58 70 Junction-to-Case RthJC 5 6 _C/W Junction-to-Lead RthJL 16 20 Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 71085 www.vishay.com S-20966—Rev. C, 01-Jul-02
1
Document Outline Datasheet Disclaimer Datasheet Disclaimer
_
C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (
W
) ID (A)
0.052 @ VGS = –4.5 V –15 –8 0.070 @ VGS = –2.5 V –10 0.105 @ VGS = –1.8 V –10.5 S
TO-220AB TO-263
G DRAIN connected to TAB G D S Top View G D S D SUB15P01-52 Top View P-Channel MOSFET SUP15P01-52 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –8 V Gate-Source Voltage VGS "8 T Continuous Drain Current C = 25_C –15 Continuous Drain Current I (T D J = 175_C) TC = 125_C –8.7 A Pulsed Drain Current IDM –25 Avalanche Current IAR –10 Repetitive Avalanche Energyb L = 0.1 mH EAR 5 mJ TC = 25_C (TO-220AB and TO-263) 25d Power Dissipation PD W TA = 25_C (TO-263)c 2.1 Operating Junction and Storage Temperature Range TJ, Tstg –55 to 175 _C THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambient PCB Mount (TO-263)c RthJA 58 70 Junction-to-Case RthJC 5 6 _C/W Junction-to-Lead RthJL 16 20 Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 71085 www.vishay.com S-20966—Rev. C, 01-Jul-02
1
Document Outline Datasheet Disclaimer Datasheet Disclaimer