Datasheet C2M1000170J (Wolfspeed) - 7
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω |
| Páginas / Página | 10 / 7 — Typical Performance. 100. Conditions:. TJ = 25 °C. IDS = 2 A. VDD = 1200 … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Typical Performance. 100. Conditions:. TJ = 25 °C. IDS = 2 A. VDD = 1200 V. Total. G(ext) = 2.5 Ω. VGS = -5V/+20 V. FWD = C2M1000170J
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Typical Performance 100 70 Conditions: Conditions: 90 TJ = 25 °C IDS = 2 A VDD = 1200 V 60 VDD = 1200 V 80 IDS = 2 A E R Total G(ext) = 2.5 Ω VGS = -5V/+20 V VGS = -5V/+20 V 70 FWD = C2M1000170J 50 FWD = C2M1000170J L = 1368 μH E L = 1368 μH 60 Total EOn 40 50 40 30 EOn itching Loss (uJ) itching Loss (uJ) 30 Sw Sw 20 20 E E Off Off 10 10 0 0 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
45 Conditions: 40 TJ = 25 °C V t DD = 1200 V f 35 RL = 600 Ω VGS = -5V/+20 V 30 25 e (ns) td (off) 20 Tim 15 tr 10 5 td (on) 0 0 10 20 30 40 50 External Gate Resistor, RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M1000170J Rev. B, 12-2017
Figure 25. Clamped Inductive Switching Energy vs. R Figure 26. Clamped Inductive Switching Energy vs. G(ext) Temperature
45 Conditions: 40 TJ = 25 °C V t DD = 1200 V f 35 RL = 600 Ω VGS = -5V/+20 V 30 25 e (ns) td (off) 20 Tim 15 tr 10 5 td (on) 0 0 10 20 30 40 50 External Gate Resistor, RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C2M1000170J Rev. B, 12-2017