Datasheet C2M1000170J (Wolfspeed)
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω |
| Páginas / Página | 10 / 1 — C2M1000170J. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
C2M1000170J. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM MOSFET Technology. Features. Package. TAB. Drain. (TAB). Benefits
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V
1700 V
DS C2M1000170J I D@ 25˚C
5.3 A
R
1.0 Ω
Silicon Carbide Power MOSFET DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Low parasitic inductance •
TAB
Low impedance package
Drain
• Separate driver source pin • Ultra-low drain-gate capacitance • Halogen-Free, RoHS compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source
Drain (TAB) Benefits
• Higher system efficiency
1 2 3 4 5 6 7 G KS S S S S S
• Smooth switching waveforms
Gate
• Reduced cooling requirements
(Pin 1)
• Minimum gate ringing
Driver Power
• Increased system reliability
Source Source (Pin 2) (Pin 3,4,5,6,7) Applications
• Auxiliary power supplies
Part Number Package
• Switch Mode Power Supplies • High-voltage capacitive loads C2M1000170J TO-263-7
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values 5.3 V I GS = 20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 3.6 VGS = 20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 6.0 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 78 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -55 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L
1
C2M1000170J Rev. B, 12-2017
1700 V
DS C2M1000170J I D@ 25˚C
5.3 A
R
1.0 Ω
Silicon Carbide Power MOSFET DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Low parasitic inductance •
TAB
Low impedance package
Drain
• Separate driver source pin • Ultra-low drain-gate capacitance • Halogen-Free, RoHS compliant • Fast intrinsic diode with low reverse recovery (Qrr) • Wide creepage (~7mm) between drain and source
Drain (TAB) Benefits
• Higher system efficiency
1 2 3 4 5 6 7 G KS S S S S S
• Smooth switching waveforms
Gate
• Reduced cooling requirements
(Pin 1)
• Minimum gate ringing
Driver Power
• Increased system reliability
Source Source (Pin 2) (Pin 3,4,5,6,7) Applications
• Auxiliary power supplies
Part Number Package
• Switch Mode Power Supplies • High-voltage capacitive loads C2M1000170J TO-263-7
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values 5.3 V I GS = 20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 3.6 VGS = 20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 6.0 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 78 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -55 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L
1
C2M1000170J Rev. B, 12-2017