Datasheet STD30NF06LAG (STMicroelectronics) - 4
| Fabricante | STMicroelectronics |
| Descripción | Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package |
| Páginas / Página | 15 / 4 — Electrical characteristics. STD30NF06LAG. Table 5: Static. Symbol. … |
| Formato / tamaño de archivo | PDF / 734 Kb |
| Idioma del documento | Inglés |
Electrical characteristics. STD30NF06LAG. Table 5: Static. Symbol. Parameter. Test conditions. Min. Typ. Max. Unit. Notes:. Table 6: Dynamic
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 4 link to page 8 link to page 8 link to page 8
Electrical characteristics STD30NF06LAG 2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown V(BR)DSS VGS = 0 V, ID = 250 µA 60 V voltage VGS = 0 V, VDS = 60 V 1 Zero gate voltage drain IDSS µA current VGS = 0 V, VDS = 60 V, 10 Tcase = 125 °C (1) Gate-body leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA current VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 1.7 2.5 V Static drain-source on- VGS = 10 V, ID = 18 A 0.022 0.028 RDS(on) Ω resistance VGS = 5 V, ID = 18 A 0.025 0.030
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 1600 Coss Output capacitance - 215 VDS = 25 V, f = 1 MHz, VGS = 0 V pF Reverse transfer Crss - 60 capacitance Qg Total gate charge VDD = 48 V, ID = 35 A, VGS = 5 V - 23 31 (see Figure 15: "Test circuit for Qgs Gate-source charge - 7 nC inductive load switching and Qgd Gate-drain charge diode recovery times") - 10 4/15 DocID029664 Rev 2
Electrical characteristics STD30NF06LAG 2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown V(BR)DSS VGS = 0 V, ID = 250 µA 60 V voltage VGS = 0 V, VDS = 60 V 1 Zero gate voltage drain IDSS µA current VGS = 0 V, VDS = 60 V, 10 Tcase = 125 °C (1) Gate-body leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA current VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 1.7 2.5 V Static drain-source on- VGS = 10 V, ID = 18 A 0.022 0.028 RDS(on) Ω resistance VGS = 5 V, ID = 18 A 0.025 0.030
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 1600 Coss Output capacitance - 215 VDS = 25 V, f = 1 MHz, VGS = 0 V pF Reverse transfer Crss - 60 capacitance Qg Total gate charge VDD = 48 V, ID = 35 A, VGS = 5 V - 23 31 (see Figure 15: "Test circuit for Qgs Gate-source charge - 7 nC inductive load switching and Qgd Gate-drain charge diode recovery times") - 10 4/15 DocID029664 Rev 2