Datasheet STD30NF06LAG (STMicroelectronics) - 3
| Fabricante | STMicroelectronics |
| Descripción | Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package |
| Páginas / Página | 15 / 3 — STD30NF06LAG. Electrical ratings. Table 2: Absolute maximum ratings. … |
| Formato / tamaño de archivo | PDF / 734 Kb |
| Idioma del documento | Inglés |
STD30NF06LAG. Electrical ratings. Table 2: Absolute maximum ratings. Symbol. Parameter. Value. Unit. Notes:. Table 3: Thermal data
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STD30NF06LAG Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit
VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V VDGR Drain-gate voltage (RGS = 20 kΩ) 60 V ID Drain current (continuous) at Tcase = 25 °C 35 A ID Drain current (continuous) at Tcase = 100 °C 25 I (1) DM Drain current (pulsed) 140 A PTOT Total dissipation at Tcase = 25 °C 70 W dv/dt (2) Peak diode recovery voltage slope 25 V/ns Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range
Notes:
(1) Pulse width is limited by safe operating area. (2) ISD ≤ 35 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS
Table 3: Thermal data Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 2.14 °C/W R (1) thj-pcb Thermal resistance junction-pcb 50
Notes:
(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not repetitive IAR 35 A (pulse width limited by Tjmax) Single pulse avalanche energy EAS 150 mJ (starting Tj=25°C, ID= IAR; VDD=50 V) DocID029664 Rev 2 3/15
STD30NF06LAG Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit
VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V VDGR Drain-gate voltage (RGS = 20 kΩ) 60 V ID Drain current (continuous) at Tcase = 25 °C 35 A ID Drain current (continuous) at Tcase = 100 °C 25 I (1) DM Drain current (pulsed) 140 A PTOT Total dissipation at Tcase = 25 °C 70 W dv/dt (2) Peak diode recovery voltage slope 25 V/ns Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range
Notes:
(1) Pulse width is limited by safe operating area. (2) ISD ≤ 35 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS
Table 3: Thermal data Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 2.14 °C/W R (1) thj-pcb Thermal resistance junction-pcb 50
Notes:
(1) When mounted on a 1-inch² FR-4, 2 Oz copper board.
Table 4: Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not repetitive IAR 35 A (pulse width limited by Tjmax) Single pulse avalanche energy EAS 150 mJ (starting Tj=25°C, ID= IAR; VDD=50 V) DocID029664 Rev 2 3/15