Datasheet HMC461LP3, 461LP3E (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz |
| Páginas / Página | 8 / 4 — HMC461LP3 / 461LP3E. InGaP HBT 1 Watt High IP3. AMPLIFIER, 1.7 - 2.2 GHz. … |
| Formato / tamaño de archivo | PDF / 479 Kb |
| Idioma del documento | Inglés |
HMC461LP3 / 461LP3E. InGaP HBT 1 Watt High IP3. AMPLIFIER, 1.7 - 2.2 GHz. ACPR vs. Supply Voltage @ 1.96 GHz
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HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz ACPR vs. Supply Voltage @ 1.96 GHz ACPR vs. Supply Voltage @ 2.14 GHz CDMA2000, 9 Channels Forward W-CDMA, 64 DCPH
-40 -35 -40 -45 CDMA2000 Rev. 8 WCDMA Frequency: 1.96 GHz 4.5V 5V 5.5V Frequency : 2.14 GHz Integration BW: 1.228 MHz -45 Integration BW: 3.84 MHz Forward Link, SR1, 9 Channels -50 64 DPCH -50 -55 ACPR (dBc) ACPR (dBc) -55 11 -60 -60 Source ACPR Source ACPR 4.5V 5V 5.5V -65 -65 T 8 10 12 14 16 18 20 22 24 8 10 12 14 16 18 20 22 24 Channel Output Power (dBm) Channel Output Power (dBm) - SM * Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are S shown where corrected data is below source ACPR. R IE
Output IP2 vs. Temperature Absolute Maximum Ratings
IF L 80 Collector Bias Voltage (Vcc1, Vcc2) +6 Vdc P RF Input Power (RFIN)(Vs = +5Vdc) +30 dBm 75 M Junction Temperature 150 °C 70 Continuous Pdiss (T = 85 °C) 2.08 W (derate 32 mW/°C above 85 °C) R A 65 Thermal Resistance E IP2 (dBm) 31 °C/W (junction to ground paddle) 60 W Storage Temperature -65 to +150 °C +25C O 55 +85C Operating Temperature -40 to +85 °C -40C 50 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 & P ELECTROSTATIC SENSITIVE DEVICE FREQUENCY (GHz) R OBSERVE HANDLING PRECAUTIONS A E IN L Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 253
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0705
InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz ACPR vs. Supply Voltage @ 1.96 GHz ACPR vs. Supply Voltage @ 2.14 GHz CDMA2000, 9 Channels Forward W-CDMA, 64 DCPH
-40 -35 -40 -45 CDMA2000 Rev. 8 WCDMA Frequency: 1.96 GHz 4.5V 5V 5.5V Frequency : 2.14 GHz Integration BW: 1.228 MHz -45 Integration BW: 3.84 MHz Forward Link, SR1, 9 Channels -50 64 DPCH -50 -55 ACPR (dBc) ACPR (dBc) -55 11 -60 -60 Source ACPR Source ACPR 4.5V 5V 5.5V -65 -65 T 8 10 12 14 16 18 20 22 24 8 10 12 14 16 18 20 22 24 Channel Output Power (dBm) Channel Output Power (dBm) - SM * Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are S shown where corrected data is below source ACPR. R IE
Output IP2 vs. Temperature Absolute Maximum Ratings
IF L 80 Collector Bias Voltage (Vcc1, Vcc2) +6 Vdc P RF Input Power (RFIN)(Vs = +5Vdc) +30 dBm 75 M Junction Temperature 150 °C 70 Continuous Pdiss (T = 85 °C) 2.08 W (derate 32 mW/°C above 85 °C) R A 65 Thermal Resistance E IP2 (dBm) 31 °C/W (junction to ground paddle) 60 W Storage Temperature -65 to +150 °C +25C O 55 +85C Operating Temperature -40 to +85 °C -40C 50 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 & P ELECTROSTATIC SENSITIVE DEVICE FREQUENCY (GHz) R OBSERVE HANDLING PRECAUTIONS A E IN L Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for 1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 253
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D