Datasheet HMC459 (Analog Devices) - 5

HMC459
v01.1007
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz Pad Descriptions
Pad Number Function Description Interface Schematic 3 1 RFIN This pad is DC coupled and matched to 50 Ohms. IP Gate Control 2 for amplifi er. +3V should be applied to Vgg2 H 2 Vgg2 for nominal operation. Vgg2 may be adjusted between 0 to +5V to temperature compensate gain. S - C RF output for amplifi er. Connect the DC R 4 RFOUT & Vdd bias (Vdd) network to provide drain current (Idd). See application circuit herein. IE IF L Gate Control 1 for amplifi er. Adjust between -2 to 0V P 5 Vgg1 to achieve Idd= 290 mA. M R A Low frequency termination. Attach bypass capacitor per E 3 ACG1 application circuit here in. W O Low frequency termination. Attach bypass capacitor per 6 ACG2 application circuit here in. R & P A E Die GND Die bottom must be connected to RF/DC ground. Bottom IN L Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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