Datasheet HMC459 (Analog Devices)

FabricanteAnalog Devices
DescripciónGaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz
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HMC459. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 18 GHz. Typical Applications. Features. Functional Diagram. General Description

Datasheet HMC459 Analog Devices

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HMC459
v01.1007
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 18 GHz Typical Applications Features
The HMC459 wideband driver is ideal for: P1dB Output Power: +25 dBm • Telecom Infrastructure Gain: 17 dB 3 • Microwave Radio & VSAT Output IP3: +31.5 dBm • Military & Space Supply Voltage: +8V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output IP Die Size: 3.12 x 1.63 x 0.1 mm H
Functional Diagram General Description
The HMC459 is a GaAs MMIC PHEMT Distributed S - C Power Amplifi er die which operates between DC R and 18 GHz. The amplifi er provides 17 dB of gain, IE +31.5 dBm output IP3 and +25 dBm of output power IF at 1 dB gain compression while requiring 290 mA L from a +8V supply. Gain fl atness is good making the P HMC459 ideal for EW, ECM and radar driver amplifi er M applications. The HMC459 amplifi er I/O’s are inter- nally matched to 50 Ohms facilitating easy integration R A into Multi-Chip-Modules (MCMs). All data is with the E chip in a 50 Ohm test fi xture connected via 0.025mm W (1 mil) diameter wire bonds of minimal length 0.31mm O (12 mils). R & P A
Electrical Specifi cations, T = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
E
A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min Typ Max Units IN L Frequency Range DC - 2.0 DC - 6.0 DC - 10.0 DC - 18.0 GHz Gain 16.5 18.5 15 18 14 17 9 12 dB Gain Flatness ±0.5 ±0.75 ±0.75 dB Gain Variation Over Temperature 0.02 0.03 0.02 0.03 0.03 0.04 0.035 0.045 dB/ °C Input Return Loss 22 19.5 19 10 dB Output Return Loss 27 15 14 14 dB Output Power for 1 dB 21 24 20.5 24.5 22 25 14 17 dBm Compression (P1dB) Saturated Output Power (Psat) 26.5 26.5 26.5 21 dBm Output Third Order Intercept 40 34 31.5 26 dBm (IP3) Noise Figure 4.0 4.0 3.0 6.5 dB Supply Current 290 290 290 290 mA (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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