Datasheet HMC-APH518 (Analog Devices) - 3

HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc ELECTROSTATIC SENSITIVE DEVICE RF Input Power 15 dBm OBSERVE HANDLING PRECAUTIONS 3 Thermal Resistance 23.9 °C/W (Channel to die bottom) Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C IP Drain Bias Current (Idd1) 600 mA H Drain Bias Current (Idd2) 670 mA S - C R
Outline Drawing
IE IF L P M R A E W O R & P A E NOTES: IN 1. ALL DIMENSIONS ARE IN INCHES [MM].
Die Packaging Information
[1] L 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 7. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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