Datasheet HMC-APH518 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz |
| Páginas / Página | 6 / 1 — HMC-APH518. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 21 - 24 GHz. Typical … |
| Formato / tamaño de archivo | PDF / 293 Kb |
| Idioma del documento | Inglés |
HMC-APH518. GaAs HEMT MMIC 1 WATT POWER. AMPLIFIER, 21 - 24 GHz. Typical Applications. Features. Functional Diagram
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HMC-APH518
v02.0208
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Typical Applications Features
This HMC-APH518 is ideal for: Output IP3: +39 dBm • Point-to-Point Radios P1dB: +30.5 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 4.49 x 1.31 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH518 is a two stage GaAs HEMT MMIC IE 1 Watt Power Amplifi er which operates between IF 21 and 24 GHz. The HMC-APH518 provides 17 dB L of gain, and an output power of +30.5 dBm at 1 dB P compression from a +5V supply voltage. All bond M pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH518 GaAs HEMT MMIC 1 E Watt Power Amplifi er is compatible with conventional W die attach methods, as well as thermocompression O and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations[1], T = +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 21 - 24 GHz Gain 16 17 dB Input Return Loss 15 dB Output Return Loss 8 dB Output power for 1dB Compression (P1dB) 28 30.5 dBm Output Third Order Intercept (IP3) 37 39 dBm Supply Current (Idd1+Idd2) 950 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 202
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0208
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 21 - 24 GHz Typical Applications Features
This HMC-APH518 is ideal for: Output IP3: +39 dBm • Point-to-Point Radios P1dB: +30.5 dBm 3 • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output IP Die Size: 4.49 x 1.31 x 0.1 mm H S - C
Functional Diagram General Description
R The HMC-APH518 is a two stage GaAs HEMT MMIC IE 1 Watt Power Amplifi er which operates between IF 21 and 24 GHz. The HMC-APH518 provides 17 dB L of gain, and an output power of +30.5 dBm at 1 dB P compression from a +5V supply voltage. All bond M pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH518 GaAs HEMT MMIC 1 E Watt Power Amplifi er is compatible with conventional W die attach methods, as well as thermocompression O and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. R & P A E IN
Electrical Specifi cations[1], T = +25° C, Vdd1=Vdd2= 5V, Idd1+Idd2= 950 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 21 - 24 GHz Gain 16 17 dB Input Return Loss 15 dB Output Return Loss 8 dB Output power for 1dB Compression (P1dB) 28 30.5 dBm Output Third Order Intercept (IP3) 37 39 dBm Supply Current (Idd1+Idd2) 950 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 202
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D