Datasheet HMC1086 (Analog Devices) - 7
| Fabricante | Analog Devices |
| Descripción | 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz |
| Páginas / Página | 9 / 7 — HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Pad Descriptions |
| Formato / tamaño de archivo | PDF / 643 Kb |
| Idioma del documento | Inglés |
HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Pad Descriptions
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HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Pad Descriptions
Pad Number Function Description Pin Schematic IP H This Pad is RF coupled and is matched to 50 Ohms. 1 RFIN The pad has zero Ohms DC resistance. R - C E 2, 10 VG1 Gate control voltage for first stage. W O 3, 9 VG2 Gate control voltage for second stage. 4,8 VD1 Drain bias for first stage. R & P A E 5, 7 VD2 Drain bias for second stage. IN 6 RFOUT This Pad is RF coupled and is matched to 50 Ohms. S - L R Die Bottom GND Die Bottom must be connected to RF/DC ground. IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
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Application Support: Phone: 1-800-ANALOG-D Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Pad Descriptions
Pad Number Function Description Pin Schematic IP H This Pad is RF coupled and is matched to 50 Ohms. 1 RFIN The pad has zero Ohms DC resistance. R - C E 2, 10 VG1 Gate control voltage for first stage. W O 3, 9 VG2 Gate control voltage for second stage. 4,8 VD1 Drain bias for first stage. R & P A E 5, 7 VD2 Drain bias for second stage. IN 6 RFOUT This Pad is RF coupled and is matched to 50 Ohms. S - L R Die Bottom GND Die Bottom must be connected to RF/DC ground. IE LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs