Datasheet ADPA7005CHIP (Analog Devices) - 10
| Fabricante | Analog Devices |
| Descripción | GaAs, pHEMT, MMIC,1 W Power Amplifier, 20 GHz to 44 GHz |
| Páginas / Página | 23 / 10 — ADPA7005CHIP. Data Sheet. +85°C. +25°C. –55°C. (%). FREQUENCY (GHz). … |
| Formato / tamaño de archivo | PDF / 522 Kb |
| Idioma del documento | Inglés |
ADPA7005CHIP. Data Sheet. +85°C. +25°C. –55°C. (%). FREQUENCY (GHz). 1620. POUT GAIN. 1560. PAE. IDD. 1500. , P. 1440. AT S. N (. mA). , G. 1380. I DD. AE P. Bm)
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ADPA7005CHIP Data Sheet 24 24 22 +85°C 22 +25°C 20 –55°C 20 18 18 16 16 (%) (%) 14 14 AT AT S S P 12 P 12 AT 10 AT 10 AE AE P 8 P 8 6 6 4 4 4V 2 2 5V 0 0 20 22 24 26 28 30 32 34 36 38 40 42 44
028
20 22 24 26 28 30 32 34 36 38 40 42 44
031
FREQUENCY (GHz)
17319-
FREQUENCY (GHz)
17319- Figure 28. Power Added Efficiency (PAE) at PSAT vs. Frequency for Various Figure 31. PAE at PSAT vs. Frequency for Various VDD, IDQ = 1200 mA, PAE Temperatures, VDD = 5 V, IDQ = 1200 mA, PAE Measured at PSAT Measured at PSAT
24 35 1620 22 POUT GAIN 30 1560 20 PAE %) IDD ( 18 AE 25 1500 16 , P (%) B) 14 d 20 1440 AT S N ( mA) P 12 AI ( AT , G 15 1380 I DD 10 AE P Bm) 8 d ( 10 1320 6 UT OP 4 5 1260 1600mA 2 1400mA 1200mA 0 1200 0 –4 –2 0 2 4 6 8 10 12 14 16 18 20
032
20 22 24 26 28 30 32 34 36 38 40 42 44
029
INPUT POWER (dBm) FREQUENCY (GHz)
17319- 17319- Figure 29. PAE at PSAT vs. Frequency for Various IDQ, VDD = 5 V, IDQ = 1200 mA, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power, 22 GHz, VDD = 5 V, PAE Measured at PSAT IDD = 1200 mA
35 2096 35 2096 POUT POUT GAIN GAIN 30 1968 PAE 30 1968 PAE %) IDD %) IDD ( ( AE 25 1840 AE 25 1840 , P , P B) B) d 20 1712 d 20 1712 N ( mA) N ( mA) AI ( AI ( , G 15 1584 I DD , G 15 1584 I DD Bm) Bm) d d ( 10 1456 ( 10 1456 UT UT O O P P 5 1328 5 1328 0 1200 0 1200 –4 –2 0 2 4 6 8 10 12 14 16 18 20
030
–4 –2 0 2 4 6 8 10 12 14 16 18 20
033
INPUT POWER (dBm)
17319-
INPUT POWER (dBm)
17319- Figure 30. POUT, Gain, PAE, and Power PAE, Drain Current with RF Applied (IDD) Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, vs. Input Power, 26 GHz, VDD = 5 V, IDD = 1200 mA 30 GHz, VDD = 5 V, IDD = 1200 mA Rev. 0 | Page 10 of 23 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 20 GHz TO 34 GHz FREQUENCY RANGE 34 GHz TO 44 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTIC CONSTANT IDD OPERATION THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding BIASING ADPA7005CHIP WITH THE HMC980LP4E APPLICATION CIRCUIT SETUP LIMITING VGATE FOR ADPA7005CHIP VGGx ABSOLUTE MAXIMUM RATING REQUIREMENT HMC980LP4E BIAS SEQUENCE Power-Up Sequence Power-Down Sequence CONSTANT DRAIN CURRENT BIASING vs. CONSTANT GATE VOLTAGE BIASING TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
028
20 22 24 26 28 30 32 34 36 38 40 42 44
031
FREQUENCY (GHz)
17319-
FREQUENCY (GHz)
17319- Figure 28. Power Added Efficiency (PAE) at PSAT vs. Frequency for Various Figure 31. PAE at PSAT vs. Frequency for Various VDD, IDQ = 1200 mA, PAE Temperatures, VDD = 5 V, IDQ = 1200 mA, PAE Measured at PSAT Measured at PSAT
24 35 1620 22 POUT GAIN 30 1560 20 PAE %) IDD ( 18 AE 25 1500 16 , P (%) B) 14 d 20 1440 AT S N ( mA) P 12 AI ( AT , G 15 1380 I DD 10 AE P Bm) 8 d ( 10 1320 6 UT OP 4 5 1260 1600mA 2 1400mA 1200mA 0 1200 0 –4 –2 0 2 4 6 8 10 12 14 16 18 20
032
20 22 24 26 28 30 32 34 36 38 40 42 44
029
INPUT POWER (dBm) FREQUENCY (GHz)
17319- 17319- Figure 29. PAE at PSAT vs. Frequency for Various IDQ, VDD = 5 V, IDQ = 1200 mA, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power, 22 GHz, VDD = 5 V, PAE Measured at PSAT IDD = 1200 mA
35 2096 35 2096 POUT POUT GAIN GAIN 30 1968 PAE 30 1968 PAE %) IDD %) IDD ( ( AE 25 1840 AE 25 1840 , P , P B) B) d 20 1712 d 20 1712 N ( mA) N ( mA) AI ( AI ( , G 15 1584 I DD , G 15 1584 I DD Bm) Bm) d d ( 10 1456 ( 10 1456 UT UT O O P P 5 1328 5 1328 0 1200 0 1200 –4 –2 0 2 4 6 8 10 12 14 16 18 20
030
–4 –2 0 2 4 6 8 10 12 14 16 18 20
033
INPUT POWER (dBm)
17319-
INPUT POWER (dBm)
17319- Figure 30. POUT, Gain, PAE, and Power PAE, Drain Current with RF Applied (IDD) Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, vs. Input Power, 26 GHz, VDD = 5 V, IDD = 1200 mA 30 GHz, VDD = 5 V, IDD = 1200 mA Rev. 0 | Page 10 of 23 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 20 GHz TO 34 GHz FREQUENCY RANGE 34 GHz TO 44 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTIC CONSTANT IDD OPERATION THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding BIASING ADPA7005CHIP WITH THE HMC980LP4E APPLICATION CIRCUIT SETUP LIMITING VGATE FOR ADPA7005CHIP VGGx ABSOLUTE MAXIMUM RATING REQUIREMENT HMC980LP4E BIAS SEQUENCE Power-Up Sequence Power-Down Sequence CONSTANT DRAIN CURRENT BIASING vs. CONSTANT GATE VOLTAGE BIASING TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE