Datasheet ADPA7006CHIP (Analog Devices) - 10
| Fabricante | Analog Devices |
| Descripción | 18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier |
| Páginas / Página | 24 / 10 — ADPA7006CHIP. Data Sheet. E A. +85°C. +25°C. –55°C. FREQUENCY (GHz). … |
| Formato / tamaño de archivo | PDF / 465 Kb |
| Idioma del documento | Inglés |
ADPA7006CHIP. Data Sheet. E A. +85°C. +25°C. –55°C. FREQUENCY (GHz). 1110. 1050. (% E A. 990. ), P. 930. POUT. GAIN. I DD. ), G m. PAE. 700mA. 870. 800mA. 900mA
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ADPA7006CHIP Data Sheet 24 24 22 22 20 20 18 18 ) 16 ) 16 (% (% T 14 T 14 SA SA P 12 P 12 T T 10 E A 10 E A PA 8 +85°C PA 8 5V +25°C 4V 6 –55°C 6 4 4 2 2 0 0 18 20 22 24 26 28 30 32 34 36 38 40 42 44
-028
18 20 22 24 26 28 30 32 34 36 38 40 42 44
-031
FREQUENCY (GHz)
186
FREQUENCY (GHz)
186 20 20 Figure 28. Power Added Efficiency (PAE) vs. Frequency for Various Temperatures, Figure 31. PAE vs. Frequency for Various Supply Voltages (VDD), IDQ =800 mA, VDD = 5 V, IDQ = 800 mA, PAE Measured at PSAT PAE Measured at PSAT
24 30 1110 22 20 ) 25 1050 18 (% E A ) 16 20 990 ), P (% B T 14 ) SA (d A P 12 IN 15 930 T A POUT (m GAIN 10 I DD E A ), G m PAE PA 8 700mA B I d 10 DD 870 800mA ( 6 900mA T OU 4 P 5 810 2 0 0 750 18 20 22 24 26 28 30 32 34 36 38 40 42 44
-029
–12 –10 –8 –6 –4 –2 0 2 4 6 8
-032
FREQUENCY (GHz)
186 186 20
INPUT POWER (dBm)
20 Figure 29. PAE vs. Frequency for Various Supply Current (IDQ), VDD = 5 V, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power, 22 GHz, VDD = 5 V, PAE Measured at PSAT IDD = 800 mA
35 1282 35 1200 POUT POUT GAIN GAIN 30 PAE 1209 30 PAE 1140 ) I ) DD IDD (% (% E E A 25 1136 A 25 1080 ), P ), P B B ) ) (d 20 1063 A (d 20 1020 A IN IN A (m A (m ), G 15 990 I DD ), G 15 960 I DD m m B B d d ( ( 10 900 T 10 917 T OU OU P P 5 844 5 840 0 771 0 780 –12 –10 –8 –6 –4 –2 0 2 4 6 8 10
-030
–10 –8 –6 –4 –2 0 2 4 6 8 10 12
-033
INPUT POWER (dBm)
186
INPUT POWER (dBm)
186 20 20 Figure 30. Output Power (POUT), Gain, PAE, and IDD vs. Input Power, Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, 30 GHz, VDD = 5 V, 26 GHz, VDD = 5 V, IDD = 800 mA IDD = 800 mA Rev. 0 | Page 10 of 24 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 18 GHz TO 20 GHz FREQUENCY RANGE 20 GHz TO 28 GHz FREQUENCY RANGE 28 GHz TO 36 GHz FREQUENCY RANGE 36 GHz TO 44 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTIC CONSTANT DRAIN CURRENT (IDD) OPERATION THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding BIASING THE ADPA7006CHIP WITH THE HMC980LP4E APPLICATION CIRCUIT SETUP LIMITING VGATE FOR THE ADPA7006CHIP VGGx AMR (ABSOLUTE MAXIMUM RATING) REQUIREMENT HMC980LP4E BIAS SEQUENCE Power-Up Sequence Power-Down Sequence CONSTANT DRAIN CURRENT BIASING vs. CONSTANT GATE VOLTAGE BIASING TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
-028
18 20 22 24 26 28 30 32 34 36 38 40 42 44
-031
FREQUENCY (GHz)
186
FREQUENCY (GHz)
186 20 20 Figure 28. Power Added Efficiency (PAE) vs. Frequency for Various Temperatures, Figure 31. PAE vs. Frequency for Various Supply Voltages (VDD), IDQ =800 mA, VDD = 5 V, IDQ = 800 mA, PAE Measured at PSAT PAE Measured at PSAT
24 30 1110 22 20 ) 25 1050 18 (% E A ) 16 20 990 ), P (% B T 14 ) SA (d A P 12 IN 15 930 T A POUT (m GAIN 10 I DD E A ), G m PAE PA 8 700mA B I d 10 DD 870 800mA ( 6 900mA T OU 4 P 5 810 2 0 0 750 18 20 22 24 26 28 30 32 34 36 38 40 42 44
-029
–12 –10 –8 –6 –4 –2 0 2 4 6 8
-032
FREQUENCY (GHz)
186 186 20
INPUT POWER (dBm)
20 Figure 29. PAE vs. Frequency for Various Supply Current (IDQ), VDD = 5 V, Figure 32. POUT, Gain, PAE, and IDD vs. Input Power, 22 GHz, VDD = 5 V, PAE Measured at PSAT IDD = 800 mA
35 1282 35 1200 POUT POUT GAIN GAIN 30 PAE 1209 30 PAE 1140 ) I ) DD IDD (% (% E E A 25 1136 A 25 1080 ), P ), P B B ) ) (d 20 1063 A (d 20 1020 A IN IN A (m A (m ), G 15 990 I DD ), G 15 960 I DD m m B B d d ( ( 10 900 T 10 917 T OU OU P P 5 844 5 840 0 771 0 780 –12 –10 –8 –6 –4 –2 0 2 4 6 8 10
-030
–10 –8 –6 –4 –2 0 2 4 6 8 10 12
-033
INPUT POWER (dBm)
186
INPUT POWER (dBm)
186 20 20 Figure 30. Output Power (POUT), Gain, PAE, and IDD vs. Input Power, Figure 33. POUT, Gain, PAE, and IDD vs. Input Power, 30 GHz, VDD = 5 V, 26 GHz, VDD = 5 V, IDD = 800 mA IDD = 800 mA Rev. 0 | Page 10 of 24 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 18 GHz TO 20 GHz FREQUENCY RANGE 20 GHz TO 28 GHz FREQUENCY RANGE 28 GHz TO 36 GHz FREQUENCY RANGE 36 GHz TO 44 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTIC CONSTANT DRAIN CURRENT (IDD) OPERATION THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding BIASING THE ADPA7006CHIP WITH THE HMC980LP4E APPLICATION CIRCUIT SETUP LIMITING VGATE FOR THE ADPA7006CHIP VGGx AMR (ABSOLUTE MAXIMUM RATING) REQUIREMENT HMC980LP4E BIAS SEQUENCE Power-Up Sequence Power-Down Sequence CONSTANT DRAIN CURRENT BIASING vs. CONSTANT GATE VOLTAGE BIASING TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE