HMC374SC70E v01.0814 GaAs pHEMT LOW NOISE AMPLIFIER0.3 - 3.0 GHzOutput P1dB vs. TemperatureOutput Psat vs. Temperature 22 22 T m 20 20 s - 18 18 (dBm) (dBm) s r 16 P1dB Psat 16 ie +25C 14 +25C 14 +85C +85C -40C -40C lif 12 12 p 0.5 1 1.5 2 2.5 3 3.5 0.5 1 1.5 2 2.5 3 3.5 m FREQUENCY (GHz) FREQUENCY (GHz) A Reverse Isolation vs. TemperaturePout, Gain & PAE @ 2 GHz 0 30 ) -5 25 Pout (% Gain +25C E -10 PAE +85C A ) -40C ), P 20 -15 (dB N IO -20 T ain (dB 15 LA ), G O -25 m IS 10 -30 out (dB 5 P -35 -40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 FREQUENCY (GHz) INPUT POWER (dBm) Gain, Noise Figure & P1dB vs. Supply Voltage @ 2 GHzSupply Current vs. Input Power @ 2 GHz 22 8 76 20 P1dB 7 Gain ) 18 6 m N 75 O (dB I 16 5 S E 1dB F 14 Noise Figure 4 IG (mA) 74 ), P U R Idd 12 3 E (dB ( IN d A B 10 2 G ) 73 8 1 6 0 72 3 3.5 4 4.5 5 5.5 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 Vdd (V) INPUT POWER (dBm) InformatioFn ofur p rnis rhiec d eb, d y A e n l al iovg eDrey a vice n s id t s b o p eliev lea d c t e o o be rd acc eurrast: A e an n d a re llioag D ble. H eovi we c ve e r, sn, I o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other nc., 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 • Fax: 978-250-3373 • O rights of third parties that may result from its use. Specifications subject to change without notice. No Prd hoe n r O e: 7 n- 81- li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m 3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 pp3li o ca rti a o pp n Susp@h portitti : P te ho .c neom : 1-800-ANALOG-D