Datasheet HMC374SC70E (Analog Devices)

FabricanteAnalog Devices
DescripciónGaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz
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HMC374SC70E. GaAs pHEMT LOW NOISE AMPLIFIER. 0.3 - 3.0 GHz. Typical Applications. Features. Functional Diagram. General Description

Datasheet HMC374SC70E Analog Devices

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HMC374SC70E
v01.0814
GaAs pHEMT LOW NOISE AMPLIFIER 0.3 - 3.0 GHz Typical Applications Features
The HmC374sC70e is ideal for: single supply: Vdd = +3.0 to +3.6V T • Cel ular/pCs/3G Broadband performance m • WCs, mmDs & ism low Noise figure: 1.6 dB s - • fixed Wireless & WlAN High Output ip3: +35 dBm s • private land mobile radio High Gain: 15 dB @ 0.6 GHz r ie lif
Functional Diagram General Description
p The HmC374sC70e is a general purpose broad- m band low Noise Amplifier (lNA) for use in the 0.3 - A 3 GHz frequency range. The lNA provides 15 dB of gain and a 1.6 dB noise figure from a single positive supply of +3.0 to +3.6V. The low noise figure coupled with a high p1dB (17 dBm) and high Oip3 (35 dBm) make this part ideal for cel ular applications. The compact lNA is designed for repeatable gain and noise figure performance. To minimize board area the design is offered in a low cost sC70e package that occupies only 0.089" x 0.053".
Electrical Specifications, Vdd= +3.3V
parameter min. [2] Typ.[1] max. [2] min. [2] Typ. [1] max. [2] min. [2] Typ. [1] max. [2] Units frequency 0.6 1.0 3.0 GHz Gain 14 15 13 14.5 6 8.5 dB Gain Variation Over Temperature 0.005 0.008 0.012 (-40
°
C to +25
°
C) dB/°C Gain Variation Over Temperature 0.004 0.005 0.008 (+25
°
C to +85
°
C) Noise figure 2 2.6 1.6 2.3 1.8 2.2 input return loss 4.5 5.5 6 7.5 8 9 dB Output return loss 5.5 7.5 8 10 13 15 Output 1 dB Compression (p1dB) 15.5 16.5 16 17 16.5 18 saturated Output power (psat) 17.5 18.5 17.5 18.5 18 19 dBm Output Third Order intercept (Oip3) 34 33.5 36 supply Current (idd) (Vdd = +3.3V) 75 75 75 mA supply Voltage (Vdd) 3.0 3.3 3.6 3.0 3.3 3.6 3.0 3.3 3.6 V [1] Typical values are determined at T =+25
°
C A [2] minimum and maximum values are determined from T =-40
°
C to T =+85
°
C A A InformatioFn ofur p rnis rhiec d eb, d y A e n l al iovg eDrey a vice n s id t s b o p eliev lea d c t e o o be rd acc eurrast: A e an n d a re llioag D ble. H eovi we c ve e r, sn, I o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other nc., 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 • Fax: 978-250-3373 • O rights of third parties that may result from its use. Specifications subject to change without notice. No Prd hoe n r O e: 7 n- 81- li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 pp3li o ca rti a o pp n Susp@h portitti : P te ho .c neom : 1-800-ANALOG-D