Datasheet HMC8325 (Analog Devices) - 7
| Fabricante | Analog Devices |
| Descripción | 71 GHz to 86 GHz, E-Band Low Noise Amplifier |
| Páginas / Página | 16 / 7 — Data Sheet. HMC8325. A = +85°C. TA = +25°C. TA = –55°C. N (. 71 72 73 74 … |
| Formato / tamaño de archivo | PDF / 310 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC8325. A = +85°C. TA = +25°C. TA = –55°C. N (. 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86. FREQUENCY (GHz)
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Data Sheet HMC8325 30 30 T 28 A = +85°C T 28 A = +85°C TA = +25°C TA = +25°C TA = –55°C 26 TA = –55°C 26 24 24 22 22 B) B) d d N ( 20 N ( 20 AI AI G 18 G 18 16 16 14 14 12 12 10 10 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
014
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
017
FREQUENCY (GHz)
14692-
FREQUENCY (GHz)
14692- Figure 14. Gain vs. Frequency over Temperature, Figure 17. Gain vs. Frequency over Temperature, VDx = 3 V, IDx = 57 mA VDx = 4 V, IDx = 57 mA
30 30 ID3/ID4 = 1.5mA ID3/ID4 = 15.0mA I I 28 D3/ID4 = 1.5mA D3/ID4 = 15.0mA I 28 D3/ID4 = 3.0mA ID3/ID4 = 20.0mA ID3/ID4 = 3.0mA ID3/ID4 = 20.0mA 26 ID3/ID4 = 5.0mA ID3/ID4 = 25.0mA 26 ID3/ID4 = 5.0mA ID3/ID4 = 25.0mA ID3/ID4 = 10.0mA ID3/ID4 = 30.0mA I I 24 24 D3/ID4 = 10.0mA D3/ID4 = 30.0mA 22 22 20 20 18 18 B) B) d 16 d 16 N ( N ( AI 14 AI 14 G 12 G 12 10 10 8 8 6 6 4 4 2 2 0 0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
015
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
018
FREQUENCY (GHz)
14692-
FREQUENCY (GHz)
14692- Figure 15. Gain vs. Frequency over Drain Current, VDx = 3 V, Figure 18. Gain vs. Frequency over Drain Current, VDx = 4 V, VG1 and VG2 Fixed at 20 mA, VG3 and VG4 Swept VG1 and VG2 Fixed at 20 mA, VG3 and VG4 Swept
30 –40 ID3/ID4 = 3.0mA ID3/ID4 = 25.0mA 28 I –42 D3/ID4 = 5.0mA ID3/ID4 = 30.0mA TA = +85°C 26 ID3/ID4 = 10.0mA ID3/ID4 = 35.0mA –44 TA = +25°C ID3/ID4 = 15.0mA ID3/ID4 = 40.0mA 24 T I A = –55°C –46 D3/ID4 = 20.0mA ID3/ID4 = 44.0mA ) 22 B –48 (d 20 N –50 18 IO –52 B) T d A 16 L –54 N ( SO AI 14 –56 G 12 SE I –58 10 –60 8 EVER –62 R 6 –64 4 –66 2 –68 0 –70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
016
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
019
FREQUENCY (GHz)
14692-
FREQUENCY (GHz)
14692- Figure 16. Gain vs. Frequency over Drain Current, Figure 19. Reverse Isolation vs. Frequency over Temperature, VD1 and VD2 = 2 V, VD3 and VD4 = 4 V VDx = 4 V, IDx = 57 mA Rev. 0 | Page 7 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATION INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
014
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
017
FREQUENCY (GHz)
14692-
FREQUENCY (GHz)
14692- Figure 14. Gain vs. Frequency over Temperature, Figure 17. Gain vs. Frequency over Temperature, VDx = 3 V, IDx = 57 mA VDx = 4 V, IDx = 57 mA
30 30 ID3/ID4 = 1.5mA ID3/ID4 = 15.0mA I I 28 D3/ID4 = 1.5mA D3/ID4 = 15.0mA I 28 D3/ID4 = 3.0mA ID3/ID4 = 20.0mA ID3/ID4 = 3.0mA ID3/ID4 = 20.0mA 26 ID3/ID4 = 5.0mA ID3/ID4 = 25.0mA 26 ID3/ID4 = 5.0mA ID3/ID4 = 25.0mA ID3/ID4 = 10.0mA ID3/ID4 = 30.0mA I I 24 24 D3/ID4 = 10.0mA D3/ID4 = 30.0mA 22 22 20 20 18 18 B) B) d 16 d 16 N ( N ( AI 14 AI 14 G 12 G 12 10 10 8 8 6 6 4 4 2 2 0 0 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
015
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
018
FREQUENCY (GHz)
14692-
FREQUENCY (GHz)
14692- Figure 15. Gain vs. Frequency over Drain Current, VDx = 3 V, Figure 18. Gain vs. Frequency over Drain Current, VDx = 4 V, VG1 and VG2 Fixed at 20 mA, VG3 and VG4 Swept VG1 and VG2 Fixed at 20 mA, VG3 and VG4 Swept
30 –40 ID3/ID4 = 3.0mA ID3/ID4 = 25.0mA 28 I –42 D3/ID4 = 5.0mA ID3/ID4 = 30.0mA TA = +85°C 26 ID3/ID4 = 10.0mA ID3/ID4 = 35.0mA –44 TA = +25°C ID3/ID4 = 15.0mA ID3/ID4 = 40.0mA 24 T I A = –55°C –46 D3/ID4 = 20.0mA ID3/ID4 = 44.0mA ) 22 B –48 (d 20 N –50 18 IO –52 B) T d A 16 L –54 N ( SO AI 14 –56 G 12 SE I –58 10 –60 8 EVER –62 R 6 –64 4 –66 2 –68 0 –70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
016
71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86
019
FREQUENCY (GHz)
14692-
FREQUENCY (GHz)
14692- Figure 16. Gain vs. Frequency over Drain Current, Figure 19. Reverse Isolation vs. Frequency over Temperature, VD1 and VD2 = 2 V, VD3 and VD4 = 4 V VDx = 4 V, IDx = 57 mA Rev. 0 | Page 7 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATION INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE