Datasheet HMC8325 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | 71 GHz to 86 GHz, E-Band Low Noise Amplifier |
| Páginas / Página | 16 / 1 — 71 GHz to 86 GHz,. E-Band Low Noise Amplifier. Data Sheet. HMC8325. … |
| Formato / tamaño de archivo | PDF / 310 Kb |
| Idioma del documento | Inglés |
71 GHz to 86 GHz,. E-Band Low Noise Amplifier. Data Sheet. HMC8325. FEATURES. GENERAL DESCRIPTION. Gain: 21 dB typical
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71 GHz to 86 GHz, E-Band Low Noise Amplifier Data Sheet HMC8325 FEATURES GENERAL DESCRIPTION Gain: 21 dB typical
The HMC8325 is an integrated E-band gal ium arsenide (GaAs),
Noise figure: 3.6 dB typical
monolithic microwave integrated circuit (MMIC), low noise
Output power for 1 dB compression: 13 dBm typical
amplifier (LNA) chip that operates from 71 GHz to 86 GHz.
Input third-order intercept at maximum gain: 1 dBm typical
The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB,
Output third-order intercept at maximum gain: 22 dBm typical
22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA
Saturated output power: 17 dBm typical
from a 3 V power supply. The HMC8325 exhibits excellent linearity
Input return loss: 15 dB typical
and is optimized for E-band communications and high capacity,
Output return loss: 17 dB typical
wireless backhaul radio systems. All data is taken with the chip
Die size: 2.844 mm × 0.999 mm × 0.05 mm
in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick ×
APPLICATIONS
7 mil long ribbon on each port.
E-band communication systems High capacity wireless backhauls Test and measurement FUNCTIONAL BLOCK DIAGRAM VG1 VD1 V V G2 D2 V V G3 D3 V V G4 D4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 3 20 RF 2 21 RF IN OUT 1 22
001
HMC8325
14692- Figure 1.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATION INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
The HMC8325 is an integrated E-band gal ium arsenide (GaAs),
Noise figure: 3.6 dB typical
monolithic microwave integrated circuit (MMIC), low noise
Output power for 1 dB compression: 13 dBm typical
amplifier (LNA) chip that operates from 71 GHz to 86 GHz.
Input third-order intercept at maximum gain: 1 dBm typical
The HMC8325 provides 21 dB of gain, 13 dBm of output P1dB,
Output third-order intercept at maximum gain: 22 dBm typical
22 dBm of OIP3, and 17 dBm of PSAT while requiring only 50 mA
Saturated output power: 17 dBm typical
from a 3 V power supply. The HMC8325 exhibits excellent linearity
Input return loss: 15 dB typical
and is optimized for E-band communications and high capacity,
Output return loss: 17 dB typical
wireless backhaul radio systems. All data is taken with the chip
Die size: 2.844 mm × 0.999 mm × 0.05 mm
in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil thick ×
APPLICATIONS
7 mil long ribbon on each port.
E-band communication systems High capacity wireless backhauls Test and measurement FUNCTIONAL BLOCK DIAGRAM VG1 VD1 V V G2 D2 V V G3 D3 V V G4 D4 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 3 20 RF 2 21 RF IN OUT 1 22
001
HMC8325
14692- Figure 1.
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATION INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE