Datasheet ADL9006 (Analog Devices)

2 GHz to 28 GHz, GaAs, pHEMT, MMIC Low Noise Amplifier Data Sheet ADL9006 FEATURES FUNCTIONAL BLOCK DIAGRAM P1dB: 20 dBm typical at 2 GHz to 6 GHz C C C C C ND DD ND G V NI NI NI NI NI G PSAT: 20.5 dBm typical at 2 GHz to 6 GHz 32 31 30 29 28 27 26 25 Gain: 15.5 dB typical at 6 GHz to 28 GHz Noise figure: 2.5 dB typical at 2 GHz to 20 GHz GND 1 24 GND V 2 23 NIC OIP3: 26 dBm typical at 2 GHz to 6 GHz GG2 GND 3 22 GND Supply voltage: 5 V at 53 mA RFIN 4 21 RFOUT GND 5 20 GND 50 Ω matched input and output NIC 6 19 NIC NIC 7 ADL9006 18 NIC APPLICATIONS GND 8 17 GND Test instrumentation 9 10 11 12 13 14 15 16 PACKAGE
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Military and space C C C C C C BASE ND NI NI NI NI NI NI ND Local oscillator driver amp G G
17307- Figure 1.
GENERAL DESCRIPTION
The ADL9006 is a gallium arsenide (GaAs), pseudomorphic is self biased with only a single positive supply needed to high electron mobility transistor (pHEMT), monolithic microwave achieve a supply current (IDD) of 53 mA. integrated circuit (MMIC), low noise amplifier that operates The ADL9006 amplifier input and output are internally between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of matched to 50 Ω. gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006
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Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 2 GHz to 6 GHz 6 GHz to 20 GHz 20 GHz to 28 GHz DC Specifications Absolute Maximum Ratings Electrostatic Discharge (ESD) Ratings ESD Ratings for ADL9006 ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Outline Dimensions Ordering Guide