Datasheet HMC441LP3E (Analog Devices) - 3
| Fabricante | Analog Devices |
| Descripción | GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz |
| Páginas / Página | 7 / 3 — HMC441LP3E. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 6.5 - 13.5 GHz. … |
| Formato / tamaño de archivo | PDF / 1.0 Mb |
| Idioma del documento | Inglés |
HMC441LP3E. GaAs pHEMT MMIC MEDIUM. POWER AMPLIFIER, 6.5 - 13.5 GHz. Power Compression @ 10 GHz. Output IP3 vs. Temperature
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HMC441LP3E
v07.1017
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Power Compression @ 10 GHz Output IP3 vs. Temperature
22 36 T ) 20 % ( 18 E 32 M A 16 ), P B 14 ) d m 28 ( 12 IN A (dB 10 3 S - S ), G IP 24 8 m B R d 6 t ( u o 4 20 IE P 2 0 16 -10 -6 -2 2 6 10 6 7 8 9 10 11 12 13 14 LIF INPUT POWER (dBm) FREQUENCY (GHz) P +25 C +85 C -40 C M Pout Gain PAE
Gain, Power & Output IP3 Gain, Power & Idd
R A
vs. Supply Voltage @ 10 GHz vs. Gate Voltage @ 10 GHz
E ) 32 35 210 W m B ) d 30 m ( B 30 180 O 3 28 d t ( ), IP a 26 s 150 m 25 B d 24 ), P t ( m 20 120 Idd a 22 B s d ( (m ), P 20 B d 15 90 A ) R & P m 1 B 18 d ), P A ( 10 60 B 16 B d d 1 ( E 14 IN 5 30 ), P A B 12 G d ( 0 10 0 IN LIN A 3 3.5 4 4.5 5 5.5 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 G Vdd Supply Voltage (V) Vgg1, Vgg2 Gate Volltage (V) Gain P1dB Psat Gain Psat P1dB IP3 Idd
Noise Figure vs. Temperature Reverse Isolation vs. Temperature
10 0 8 -10 ) B d ) ( B E d R 6 ( -20 U N IG IO T F A E 4 L -30 IS O O IS N 2 -40 0 -50 6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
v07.1017
GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Power Compression @ 10 GHz Output IP3 vs. Temperature
22 36 T ) 20 % ( 18 E 32 M A 16 ), P B 14 ) d m 28 ( 12 IN A (dB 10 3 S - S ), G IP 24 8 m B R d 6 t ( u o 4 20 IE P 2 0 16 -10 -6 -2 2 6 10 6 7 8 9 10 11 12 13 14 LIF INPUT POWER (dBm) FREQUENCY (GHz) P +25 C +85 C -40 C M Pout Gain PAE
Gain, Power & Output IP3 Gain, Power & Idd
R A
vs. Supply Voltage @ 10 GHz vs. Gate Voltage @ 10 GHz
E ) 32 35 210 W m B ) d 30 m ( B 30 180 O 3 28 d t ( ), IP a 26 s 150 m 25 B d 24 ), P t ( m 20 120 Idd a 22 B s d ( (m ), P 20 B d 15 90 A ) R & P m 1 B 18 d ), P A ( 10 60 B 16 B d d 1 ( E 14 IN 5 30 ), P A B 12 G d ( 0 10 0 IN LIN A 3 3.5 4 4.5 5 5.5 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 G Vdd Supply Voltage (V) Vgg1, Vgg2 Gate Volltage (V) Gain P1dB Psat Gain Psat P1dB IP3 Idd
Noise Figure vs. Temperature Reverse Isolation vs. Temperature
10 0 8 -10 ) B d ) ( B E d R 6 ( -20 U N IG IO T F A E 4 L -30 IS O O IS N 2 -40 0 -50 6 7 8 9 10 11 12 13 14 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C -40 C +25 C +85 C -40 C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D