Datasheet HMC609 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónGaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
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HMC609. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Pad Descriptions. Assembly Diagram. 1 - 112

HMC609 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Pad Descriptions Assembly Diagram 1 - 112

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HMC609
v03.0210
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic IP This pad is AC coupled and 1 RFIN H matched to 50 Ohms. 2, 5, 6, 10 These pads & die bottom must be GND Die Bottom connected to RF/DC ground. E - C Power Supply Voltage for the amplifi er. IS 3, 4 Vdd1, Vdd2 External bypass capacitors of 100 pF & 0.1 μF are required. This pad is AC coupled and 7 RFOUT matched to 50 Ohms. W NO O Gates supply voltage for the amplifi er. External bypass 8, 9 Vgg2, Vgg1 capacitors of 100 pF and 0.1 μF are required. S - L R IE
Assembly Diagram
IF L P M A Inf F or o mar pr tion f ic ur e, de nished bliy ve An ralyo a g n De d to p vices is lbaelc ie e o ved trde o b r e s a : H ccuraittt e itae M nd reliicr abl ow e. H a o v we e C ver, noo rpo F roa r ti p o ri n c , e 2 , d0el A iv lepha R ry, and otad, C o plac h e e o lm rde s rsfo : rd, MA 01 Analog Devi 8 c 2 es 4 , Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 112
Phone: 978-250-3343 Fax: 978-250-3373 O P rde hon r O e: 7 n 81 - - l3in 2 e a 9-47 t w 0 ww 0 • O . rd h e itt r o i nte lin .co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r app ation Su sp@ pohrtitti : P te ho .c ne om : 1-800-ANALOG-D