Datasheet HMC609 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| Páginas / Página | 6 / 4 — HMC609. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Absolute Maximum … |
| Formato / tamaño de archivo | PDF / 337 Kb |
| Idioma del documento | Inglés |
HMC609. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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HMC609
v03.0210
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
1
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) 7 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5 Vdc) +15 dBm +5.5 160 IP Channel Temperature 175 °C +6.0 170 H Continuous Pdiss (T = 85 °C) +6.5 180 1.64 W (derate 18 mW/°C above 85 °C) Note: Amplifi er will operate over full voltage range shown above Thermal Resistance 55 °C/W (channel to ground pad) E - C Storage Temperature -65 to +150 °C IS ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -55 to +85 °C OBSERVE HANDLING PRECAUTIONS W NO O
Outline Drawing
S - L R IE IF L P M A
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] Standard Alternate 2. DIE THICKNESS IS 0.007” GP-2 (Gel Pack) [2] 3. TYPICAL BOND PAD IS 0.004” SQUARE 4. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 5. BACKSIDE METAL IS GROUND packaging dimensions. 6. BOND PAD METALIZATION: GOLD [2] For alternate packaging information contact Hittite 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS Microwave Corporation. 8. OVERALL DIE SIZE ±0.002” Inf F or o m r pr ation ifc ur e, de nished lbiv y e Anry alo a g n D d to p evices is la beclie o eved rde to b r e sa: H ccur iattti e tae M nd reliicr abl ow e. H a o v wee C ver, o n rp o o F roar tiporin c ,e 2 , 0 de A liv lepha R ry, an o d t ad, C o plac h e eolm rdesrfo s: rd, MA 01 Analog Devi 8 c 2 e 4 s, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rde Phon r O e: 7 n- 81 li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o ite nli .c n o e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com
1 - 111
Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r app ation S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D
v03.0210
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
1
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) 7 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5 Vdc) +15 dBm +5.5 160 IP Channel Temperature 175 °C +6.0 170 H Continuous Pdiss (T = 85 °C) +6.5 180 1.64 W (derate 18 mW/°C above 85 °C) Note: Amplifi er will operate over full voltage range shown above Thermal Resistance 55 °C/W (channel to ground pad) E - C Storage Temperature -65 to +150 °C IS ELECTROSTATIC SENSITIVE DEVICE Operating Temperature -55 to +85 °C OBSERVE HANDLING PRECAUTIONS W NO O
Outline Drawing
S - L R IE IF L P M A
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] Standard Alternate 2. DIE THICKNESS IS 0.007” GP-2 (Gel Pack) [2] 3. TYPICAL BOND PAD IS 0.004” SQUARE 4. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 5. BACKSIDE METAL IS GROUND packaging dimensions. 6. BOND PAD METALIZATION: GOLD [2] For alternate packaging information contact Hittite 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS Microwave Corporation. 8. OVERALL DIE SIZE ±0.002” Inf F or o m r pr ation ifc ur e, de nished lbiv y e Anry alo a g n D d to p evices is la beclie o eved rde to b r e sa: H ccur iattti e tae M nd reliicr abl ow e. H a o v wee C ver, o n rp o o F roar tiporin c ,e 2 , 0 de A liv lepha R ry, an o d t ad, C o plac h e eolm rdesrfo s: rd, MA 01 Analog Devi 8 c 2 e 4 s, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rde Phon r O e: 7 n- 81 li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o ite nli .c n o e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com
1 - 111
Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r app ation S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D